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    IXTH1N200P3 Search Results

    IXTH1N200P3 Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH1N200P3
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2000V 1A TO-247 Original PDF 271.04KB
    IXTH1N200P3HV
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2000V 1A TO-247HV Original PDF 271.04KB
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    IXTH1N200P3 Price and Stock

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    IXYS Corporation IXTH1N200P3

    MOSFET N-CH 2000V 1A TO247
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    DigiKey IXTH1N200P3 Tube
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    Mouser Electronics IXTH1N200P3
    • 1 $10.14
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    IXYS Corporation IXTH1N200P3HV

    MOSFET N-CH 2000V 1A TO247HV
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    DigiKey IXTH1N200P3HV Tube 1
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    Mouser Electronics IXTH1N200P3HV 246
    • 1 $10.39
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    TME IXTH1N200P3HV 1
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    Littelfuse Inc IXTH1N200P3HV

    Trans MOSFET N-CH 2KV 1A 3-Pin(3+Tab) TO-247HV
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    Verical IXTH1N200P3HV 300 8
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    Newark IXTH1N200P3HV Bulk 300
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    RS IXTH1N200P3HV Bulk 8 Weeks 30
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    Quest Components IXTH1N200P3HV 240
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    Littelfuse Inc IXTH1N200P3

    Mosfet, N-Ch, 2Kv, 1A, 150Deg C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:2Kv; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Littelfuse IXTH1N200P3
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    Newark IXTH1N200P3 Bulk 300
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    IXTH1N200P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T1N200

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200 PDF

    Contextual Info: Preliminary Technical Information IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


    Original     		IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 O-263HV ID110 100ms PDF

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 PDF