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    IXTH140P10T Search Results

    IXTH140P10T Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH140P10T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140A TO-247 Original PDF 6
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    IXYS Corporation IXTH140P10T

    MOSFET P-CH 100V 140A TO247
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    Littelfuse Inc IXTH140P10T

    DiscMSFT PChan-Trench Gate TO-247AD
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    IXTH140P10T Datasheets Context Search

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    IXTH140P10T

    Abstract: IXTT140P10T
    Contextual Info: Preliminary Technical Information IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T PDF

    Contextual Info: IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 10mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T A8-P10) PDF

    Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT140P10T IXTH140P10T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T PDF