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    IXTA10N60P Search Results

    IXTA10N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA10N60P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK Original PDF 4
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    IXYS Corporation IXTA10N60P

    MOSFET N-CH 600V 10A TO263
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    Littelfuse Inc IXTA10N60P

    Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK
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    IXTA10N60P Datasheets Context Search

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    IXTA10N60P

    Abstract: IXTP10N60P 10N60P 10N60
    Contextual Info: IXTA10N60P IXTP10N60P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA10N60P IXTP10N60P O-263 10N60P 4-18-10-D IXTA10N60P IXTP10N60P 10N60P 10N60 PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA10N60P IXTP10N60P RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA10N60P IXTP10N60P O-263 10N60P 4-18-10-D PDF