IXGH32N50BU1S Search Results
IXGH32N50BU1S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXGH32N50BU1S |
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HiPerFAST IGBT with Diode Combi Pack | Original | 52.81KB | 2 |
IXGH32N50BU1S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM |
OCR Scan |
IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) | |
MJI-25Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2 |
OCR Scan |
IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25 | |
IXGH32N50BU1
Abstract: IXGH32N50BU1S
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Original |
IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S |