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    IXFN300N10P Search Results

    IXFN300N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN300N10P
    		IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH SOT-227 Original PDF 4
    SF Impression Pixel

    IXFN300N10P Price and Stock

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    IXYS Corporation IXFN300N10P

    MOSFET N-CH 100V 295A SOT227B
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    DigiKey IXFN300N10P Tube 112 1
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    Mouser Electronics IXFN300N10P 1,573
    • 1 $46.23
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    Future Electronics IXFN300N10P Tube 300
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    TTI IXFN300N10P Tube 300
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    TME IXFN300N10P 1
    • 1 $55.49
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    Littelfuse Inc IXFN300N10P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube |Littelfuse IXFN300N10P
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    Newark IXFN300N10P Bulk 300
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    IXFN300N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN300N10P

    Abstract: 300N10P
    Contextual Info: Preliminary Technical Information IXFN300N10P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFN300N10P 100ms 300N10P IXFN300N10P PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXFN300N10P 100ms 300N10P PDF

    Contextual Info: IXFN300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS Continuous 20


    Original     		IXFN300N10P 100ms 300N10P PDF