IXFL36N100P Search Results
IXFL36N100P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXYS 1210Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS |
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IXFL36N100P 300ns 300hnical 338B2 IXYS 1210 |