Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFK30N110P Search Results

    IXFK30N110P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK30N110P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 30A TO-264 Original PDF 4
    SF Impression Pixel

    IXFK30N110P Price and Stock

    IXYS Corporation

    IXYS Corporation IXFK30N110P

    MOSFET N-CH 1100V 30A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK30N110P Tube 25
    • 1 -
    • 10 -
    • 100 $17.84
    • 1000 $17.84
    • 10000 $17.84
    		Buy Now

    IXFK30N110P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFX30N110P

    Abstract: PLUS247 ixfk 30N110P
    Contextual Info: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P 4-01-08-A IXFX30N110P PLUS247 ixfk 30N110P PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK30N110P IXFX30N110P VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P PDF

    Z 728

    Contextual Info: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK30N110P IXFX30N110P O-264 30N110P 4-01-08-A Z 728 PDF