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    IXFK170N20P Search Results

    IXFK170N20P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK170N20P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 170A TO-264 Original PDF 5
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    IXFK170N20P Price and Stock

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    IXYS Corporation IXFK170N20P

    MOSFET N-CH 200V 170A TO264AA
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    DigiKey IXFK170N20P Tube 300
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    Mouser Electronics IXFK170N20P
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    Future Electronics IXFK170N20P Tube 300
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    New Advantage Corporation IXFK170N20P 20 1
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    Littelfuse Inc IXFK170N20P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK170N20P
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    Newark IXFK170N20P Bulk 300
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    IXFK170N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiperFETTM VDSS ID25 IXFK170N20P IXFX170N20P = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original
    IXFK170N20P IXFX170N20P O-264 100ms 170N20P PDF

    Contextual Info: PolarTM HiperFETTM Power MOSFET IXFK170N20P IXFX170N20P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous


    Original
    IXFK170N20P IXFX170N20P O-264 100ms 170N20P PDF

    IXFX170N20P

    Abstract: IXFK170N20P PLUS247 T170N
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiperFETTM IXFK170N20P IXFX170N20P VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original
    IXFK170N20P IXFX170N20P O-264 100ms 170N20P IXFX170N20P IXFK170N20P PLUS247 T170N PDF