IXBT20N300HV Search Results
IXBT20N300HV Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| IXBT20N300HV |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 50A 250W TO268 | Original | 5 |
IXBT20N300HV Price and Stock
IXYS Corporation
IXYS Corporation IXBT20N300HVIGBT 3000V 50A TO-268AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBT20N300HV | Tube | 30 |
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IXBT20N300HV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXBT20N300HV IC110 O-268 20N300 | |
B20N30
Abstract: IXBT20N300HV 20N30
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Original |
IXBT20N300HV IC110 IC110 O-268 20N300 B20N30 IXBT20N300HV 20N30 |