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    IXBN75N170A Search Results

    IXBN75N170A Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBN 75N170A
    		IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF 89.82KB 2
    IXBN75N170A
    		IXYS Bipolar MOS Transistor Original PDF 89.82KB 2
    SF Impression Pixel

    IXBN75N170A Price and Stock

    IXYS Corporation

    IXYS Corporation IXBN75N170A

    IGBT MOD 1700V 75A 625W SOT-227B
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    IXBN75N170A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBN75N170A VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBN75N170A OT-227B, E153432 Kelv60V 75N170A PDF

    IXBN75N170A

    Abstract: IXBN 75N170A transistor 600 volts.50 amperes
    Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBN75N170A OT-227B, E153432 75N170A IXBN75N170A IXBN 75N170A transistor 600 volts.50 amperes PDF