IW TRANSISTOR Search Results

Contextual Info: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured

Contextual Info: Afa Iw V f Satellite C om m unications Power Transistor PH 1600-1.5 1.5 Watts, 1.55-1.65 GHz Features Outline Drawing • CW Operation • Internal Impedance Matching • Common Base Configuration • Multilayer Metal / Ceramic Package • Gold Metallization System

15D transistor

Abstract: 2DI75M-050 1S120 yv-10
Contextual Info: 2DI75M-050 75A % ± '< r7-*:ï>n.-)V IW fé 'tffè : Outline Drawings POWER TRANSISTOR MODULE Features High DC Current Gain ¡ ft& T A v+ 'sV High Speed Switching IffliÊ : A pplications ÿ lÏÏ'f> '< —9 General Purpose Inverter Uninterruptible Power Supply

Contextual Info: N AUER PHXLIPS/DISCRETE ooa7Dao 4 fl?D D y v r « a IW T - Z h o l PLASTIC RF TRANSISTORS INSTRUMENTATION' COMMUNICATIONS • Wideband Preamplifiers Oscilloscopes • Spectrum Analyzers ^ Frequency .Counters •' •VHF/UHF Amplifiers • Log Amplifiers /c-» CATV/MATV Amplifiers

2-7D101A

Abstract: 2SA1426 2SC3666
Contextual Info: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)

transistor fn 155

Contextual Info: HMSn'wìnt-t r* «nnS 140Commerce Drive iW llC f U S B n it Montgomeryville, PA18936-1013 Tei: 215 631-9840 F?»#>&s&P&nüerùtt£>v SD 1143 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V

MRD810

Contextual Info: M R D 8 1 0 silicon 35 VOLTS NPN SILICON PHOTO TRANSISTOR NPN SILICON PHOTO TRANSISTOR 2 5 0 M IL L IW A T T S . . . designed fo r application in card and tape readers, optica! char­ acter recognition, shaft encoders, industrial inspection, processing and

Contextual Info: Preview DATA SHEET_ HM 67005 8 Kx8 CMOS DUAL PORT RAM FEATURES . . . . . FAST ACCESS TIME : - MILITARY : 35 TO 55 ns max - COMMERCIAL : 25 TO 55 ns (max) VERY LOW POWER CONSUMPTION : - ACTIVE : 500 mW (typ) -STANDBY :10 |iW (typ)

2SA1972

Contextual Info: TO SHIBA 2SA1972 TOSHIBA TRANSISTOR ? SILICON PNP TRIPLE DIFFUSED TYPE <; A 1 Q 7 9 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 5.1 M AX. Rîo4i V n iw * • v ^ = _ á n n v ' “ ö - ’ . T \jJ 2 j ' MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

SOT123

Abstract: SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76
Contextual Info: - 2 ,1-Ot,r RICHARDSON ELECTRONICS m* 3M « ir> 14E 0 7734flciö 0000503 T w -iw .« '» ir f if r r fff Transistors for Broadcast Applications Philips FM Broadcast 87-108 MHz Bipolar Ttansistors Load Power @108 MHz W Type Number Power Gain @ 108 MHz (dB)

2N6084

Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W

2SC4230

Contextual Info: H F X series Switchirç Power Transistor 2a 2SC4230 NPN ÎT2V80HFX) > IW B r f s iE I Outline Dimensions •'VrO-’-T V - - " - JSN M W O fc '^ .a S& ir: Absolute Maximum Ratings « ^ ft Conditions 12 # Symbol Item iS 'ffiS .S L Storage Temperature T s tg

tlc3702

Abstract: picoammeter schematic diagram
Contextual Info: TLC3702 DUAL MICROPOWER LinCMOS VOLTAGE COMPARATORS SLCS013D - NOVEMBER 1986 - REVISED NOVEMBER 1998 • Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, • Very Low Power . . . 100 |iW Typ at 5 V • Fast Response Time . . . tp m = 2.7 us Typ

tlc37021

Abstract: TLC37021P
Contextual Info: TLC3702, TLC3702Q DUAL MICROPOWER LinCMOS VOLTAGE COMPARATORS SLCS013C - NOVEMBER 1686 - REVISED FEBRUARY 1997 Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, D, JG, OR P PACKAGE TOP VIEW I q = ± 8 mA Very Low Power. . . 100 |iW Typ at 5 V

Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

JU003

Contextual Info: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: IIM II R B September 1989 HM 65664 DATASHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 nW (typ)

1s1g

Abstract: M210 TRANSISTOR KJ
Contextual Info: 2DI150Z-1200 50A IW fé ’+ f è ! Outline Drawings POWER TRANSISTOR MODULE • f ô j l : F e a tu re s • EÜffiMt High Voltage • y l) —sfc-f V f — • ASO A 'iïk i' • flftüiïfé Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type

TLC1079

Abstract: TLC27L4 TLC27L9 TLC1079 L
Contextual Info: TLC1079 LinCMOS jiPOWER PRECISION QUAD OPERATIONAL AMPLIFIER SLQS023B - AUGUST 1988 - REVISED DECEMBER 1992 Power Dissipation as Low as 10 iW Typ Per Amplifier D, J, OR N PACKAGE (TOP VIEW Operates on a Single Silver-Oxide Watch Battery, V dd = 1.4 V Min

Contextual Info: IC M 7224 LCD] IC M 7225 (LED 4V2-Digit Counter/ Decoder/ Drivers FEATURES • High frequency counting—guaranteed 15MHz, typically 25MHz at 5V • Low power operation—less than 100/iW quiescent < STORE and RESET inputs permit operation as frequency or period counter