IV-80 DIODE Search Results

book TRANSISTOR 2N2222

Abstract: TTC 103 thermistor XTR104AD
Contextual Info: Or, Call Customer Service al 1-80Û-548-6132 USA Only B U R R -B R O W N G i B O XTR101 l AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30(iV max Low Voltage Drift, 0.75(iV/°C max

Contextual Info: 1N2932 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 22m Peak Curr. Tol.2.2m Total Cap. (F)1200p Ip/Iv Min2.5 Vp90m Vv530m Fwd Volt @Ipeak740m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms).80 Neg Resist. Semiconductor MaterialSilicon

Contextual Info: B Y T 2 3 0 P IV - 1 0 0 0 B Y T 2 3 1 P IV - 1 0 0 0 FAST R ECO VER Y R ECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 1000 V V f (max) 1.8 V trr (max) 80 ns ESS ˌ K2 A2 K1 A1 A2 K1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 FEATURES AND BENEFITS

Contextual Info: OSHIBA LASER/FBR OPTIC IQ 1 • ^7252 DG1SÖ41 3 «TOSt. T-4i~07 TOSHIBA LASER DIODE TOLD 80 t e n t a t iv e " Applications Fiber optic transmission systems• FEATURES . InGaAsP/lnP buried-hetero structure Wavelength 1.3ym . High reliability MTTF > 10s hrs

Contextual Info: ANALOG DEVICES FEATURES Acquisition Time to 0.01%: 700 ns Maximum Low Power Dissipation: 95 mW Low Droop Rate: 0.01 |iV/|is Fully Specified and Tested Hold Mode Distortion Total Harmonic Distortion: 80 dB Maximum Aperture Jitter: 75 ps Maximum Internal Hold Capacitor

227A

Abstract: OP227
Contextual Info: 0 ^ Low-Noise, Ultra-Low Offset Voltage Operational Amplifier a W î# C Q IO Q IC CORPORATION 0P-2Z7 FEATURES DESCRIPTION • Low V q s . 80/iV Max. The OP-227 is a very low offset, very low-noise dual opera­

UDN2981

Abstract: UDN2983 UDN2981 application note
Contextual Info: I I I li I 2984 8-CH ANNEL SOURCE D R IV ER S U D N 2982/84L W — -E3 U D N 2981-84A Recommended for high-side switching applications that benefit from separate logic and load grounds, these devices encompass load supply voltages to 80 V and output currents to -500 mA. The

FLUKE 77 series II service manual

Abstract: FLUKE 77 series II multimeter FLUKE 77 series II manual FLUKE 77 series 1 multimeter FLUKE 75 series II multimeter Fluke Multimeter repair Fluke 77 user manual Fluke 77 Multimeter digital capacitance meter fluke 75 meter manual
Contextual Info: Model 77 Series IV Digital Multimeter Users Manual PN 2695884 September 2006 2006 Fluke Corporation. All rights reserved. Printed in USA All product names are trademarks of their respective companies. Lifetime Limited Warranty Each Fluke 20, 70, 80, 170 and 180 Series DMM will be free from defects in material and workmanship for its lifetime. As used herein, “lifetime” is defined as seven years after Fluke discontinues manufacturing the product, but the warranty period shall be at least ten years from

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376
Contextual Info: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche IV Color of light [mcd] emitting area TOPLED LH T674-KM LH T674-L LH T674-M LH T674-LN LS T670-HK LS T670-J

LCBT67S

Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
Contextual Info: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

m5266

Contextual Info: MITSUBISHI <ANALOG ASSP> M5266P LOW SATURATION O U TPU T T Y P E CURRENT DRIVER DESCRIPTION M 5 2 6 6 P is quad Darlington current driver sem iconductor integrated circuit w h ich consists o f NPN transistors w ith clam p diode and it can be driven directly by very small input

Contextual Info: MITSUBISHI <ANALOG ASSP> M S267P LOW SATURATION OUTPUT T Y P E CURRENT DRIVER DESCRIPTION M 5 2 6 7 P is quad D arlington current driver sem iconductor integrated circuit w h ich consists o f PNP and NPN transistors w ith clam p diode and it can be driven directly by very small

Contextual Info: MITSUBISHI <ANALOG ASSP> M5270L LOW SATURATION OUTPUT TYPE CURRENT DRIVER DESCRIPTION M 5 2 7 0 L is dual D arlington current driver sem iconductor integrated circuit w h ich consists o f NPN transistors w ith clam p diode and it can be driven directly from 5 V -typ e m icro ­

Contextual Info: MITSUBISHI <AWA’_OG ASSP> M5265P LOW SATURATION O UTPUT T Y P E CURRENT DRIVER DESCRIPTION M 5 2 6 5 P is quad D arlington current driver sem iconductor integrated circuit w h ich consists o f PNP and NPN transistors w ith cl^m p diode and it can be driven directly by very small

M5269L

Contextual Info: MITSUBISHI <ANALOG ASSP> M5269L LOW SATURATION O U TPUT T Y P E CURRENT DR IVER DESCRIPTION M 5 2 6 9 L is dual D arlington current driver sem iconductor integrated circuit w h ich consists o f PNP and NPN transistors w ith clam p diode and it can be driven directly fro m 5 V -type

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

Q62902-B152-F222

Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

1SR119

Abstract: CV19B
Contextual Info: — ttm rss • H M a u h íT ío p iu e le c iro n ic s T 68C 09 8 26 -f st — K Fast Recovery Diode V19 Tfl DE I M M T L E D S ODCHûEb ñ -62M IN(2.44)29M INI1.14)5.0M AX -2 9 M IN (0 . 2 ) (1.14) Symbol (Blue) S (0.14) „ 03.5 MAX T yp e V r r m : 1 0 0 V -6 0 0 V

VSF365S1

Contextual Info: MT907-PRSS Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25℃ ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Luminous Intensity IF=20mA Iv Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength λp IF=20mA Spectral Line Half Width

VSF614C1

Contextual Info: VSF614C1 Visible Light Emitting Diode ① Anode ② Cathode Dimensions Unit:mm ･High Luminous Intensity ･Wide Illumination ･Compact APPLICATIONS ･Displays ･Indicators ･Decorations FEATURES SPECTRAL OUTPUT 120 To purchase this part contact Marktech Optoelectronics at

FHF100-200_300-C_A_3D

Abstract: V09G i2t class CC
Contextual Info: = 5 ^ 0 • S H I I AcH '68C 0 9 8 2 4 =i* —-K Fast Recovery Diode DE I bfl mlH LSOS D D OC Hf l S H T V09 4£ T -Q 2 > '1 \ V r r m : 200V~600V lF(AV) : 0.8A trr: 0.4^s 03.5 M A X (0.14) T yp e \? p Symbol(Blue) Cathode band C o lo r o f cathode band