IT15648 Search Results

A1758

Abstract: ECH8502 ENA1758
Contextual Info: ECH8502 Ordering number : ENA1758 SANYO Semiconductors DATA SHEET ECH8502 PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE sat =0.08V(typ.)@IC=2.5A

Contextual Info: ECH8502 Ordering number : ENA1758A SANYO Semiconductors DATA SHEET ECH8502 PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE sat =0.08V(typ.)@IC=2.5A

Contextual Info: Ordering number : ENA1758A ECH8502 Bipolar Transistor http://onsemi.com – 50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A

A1758

Contextual Info: ECH8502 Ordering number : ENA1758A SANYO Semiconductors DATA SHEET ECH8502 PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE sat =0.08V(typ.)@IC=2.5A

A1758

Abstract: ta75 ic A17581
Contextual Info: ECH8502 注文コード No. N A 1 7 5 8 三洋半導体データシート N ECH8502 PNP/NPN エピタキシァルプレーナ型シリコントランジスタ ゲートドライブ用 特長 ・ 複合タイプであり高密度実装可能 ・ 実装高 0.9mm