IT04329 Search Results

Contextual Info: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.

IT10074

Abstract: 2SJ629
Contextual Info: 2SJ629 注文コード No. N 9 0 8 4 A 三洋半導体データシート 半導体ニューズ No.N9084 をさしかえてください。 2SJ629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。

82605

Abstract: 2SJ629
Contextual Info: 2SJ629 Ordering number : EN9084A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C

IC rl46

Abstract: SCH1301 RL46
Contextual Info: SCH1301 Ordering number : ENN8099A P-Channel Silicon MOSFET SCH1301 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

RL46

Abstract: SCH1301
Contextual Info: SCH1301 注文コード No. N 8 0 9 9 A 三洋半導体データシート 半導体ニューズ No.N8099 とさしかえてください。 SCH1301 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

Contextual Info: 2SJ629 Ordering number : EN9084 P-Channel Silicon MOSFET 2SJ629 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

IC rl46

Abstract: VEC2611
Contextual Info: VEC2611 Ordering number : ENA0425 SANYO Semiconductors DATA SHEET VEC2611 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

A0425

Abstract: VEC2611 IT-1109
Contextual Info: VEC2611 注文コード No. N A 0 4 2 5 三洋半導体データシート N VEC2611 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗の N チャネルおよび P チャネル MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合

CPH3321

Abstract: MARKING JW
Contextual Info: CPH3321 Ordering number : ENN7747 N-Channel Silicon MOSFET CPH3321 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

SCH1301

Abstract: IC rl46
Contextual Info: SCH1301 Ordering number : ENN8099 P-Channel Silicon MOSFET SCH1301 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

IC rl46

Abstract: MCH3319 RL46
Contextual Info: Ordering number : ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3319] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65

CPH6320

Contextual Info: CPH6320 Ordering number : ENN8208 P-Channel Silicon MOSFET CPH6320 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol