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IT02920 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MCH6616 Abstract: TA-3262 Contextual Info: Ordering number : ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications • • • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.	Original	ENN7013 MCH6616 MCH6616] MCH6616 TA-3262	PDF
CPH5803 Abstract: TA-3101 6935-2 MCH3405 SBS004M Contextual Info: CPH5803 注文コード No. N 6 9 3 5 B 三洋半導体データシート半導体データシート No.N6935A をさしかえてください。 CPH5803 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード	Original	CPH5803 N6935A MCH3405) SBS004M) 900mm2 TC-00001887 62005PE TA-3101 CPH5803 6935-2 MCH3405 SBS004M	PDF
MCH6626 Contextual Info: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling	Original	MCH6626 ENN7918 MCH6626] MCH6626	PDF
Contextual Info: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling	Original	MCH6626 MCH6626] MCH6626 ENN7918 MCH6626/D	PDF
71801 Abstract: N7013 MCH6616 7013-1 TA-3262 Contextual Info: 注文コード No. N 7 0 1 3 MCH6616 No. N7013 71801 新 MCH6616 特長 N チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・2.5V 駆動。・MOS 形電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能で	Original	MCH6616 N7013 900mm2 IT02920 900mm2 IT03308 IT03309 71801 N7013 MCH6616 7013-1 TA-3262	PDF
MCH6626 Abstract: IT025 Contextual Info: 注文コード No. N 7 9 1 8 MCH6626 三洋半導体データシート N MCH6626 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ汎用スイッチングデバイス・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを	Original	MCH6626 900mm2 900mm2 IT03307 --10V IT03377 IT02521 MCH6626 IT025	PDF
CPH5803 Abstract: MCH3405 SBS004M EN693 Contextual Info: CPH5803 Ordering number : EN6935B SANYO Semiconductors DATA SHEET CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)	Original	CPH5803 EN6935B MCH3405) SBS004M) CPH5803 MCH3405 SBS004M EN693	PDF
CPH5803 Abstract: TA-3101 MCH3405 SBS004M marking QD Contextual Info: Ordering number : ENN6935 CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3405 and a Schottky Barrier Diode (SBS004M) 2171	Original	ENN6935 CPH5803 MCH3405) SBS004M) CPH5803] CPH5803 TA-3101 MCH3405 SBS004M marking QD	PDF
TA-3101 Contextual Info: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)	Original	ENN6935A CPH5803 MCH3405) SBS004M) TA-3101	PDF