IT025 Search Results

Contextual Info: Ordering number : ENN6665 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

Contextual Info: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max

IT0251

Contextual Info: Ordering number : ENN6649 Diffused Junction Type Silicon Diode SVC325 IS M iY O l Varactor Diode Features Package Dimensions • Miniaturization and high-integration o f tuner sets can be easily achieved due to the small package. • High capacitance ratio and high quality factor.

Contextual Info: Ordering number : ENN6795 N-Channel and P-Channel Silicon MOSFET MCH6614 SAÜYO Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6614 incorporates two elements that are an N-channel and a P-channel M O SF E T s that feature low

MCH6614

Contextual Info: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby

2SJ289

Contextual Info: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max

2SJ609

Abstract: TA-2920
Contextual Info: Ordering number : ENN6671 2SJ609 P-Channel Silicon MOSFET 2SJ609 DC / DC Converter Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SJ609] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5 3.0 11.0 • Package Dimensions

MOSFET 2906

Abstract: TA-2906 MCH6303 N1500
Contextual Info: Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6303] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15

2SK3449

Contextual Info: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0

2sc5696

Abstract: 2SC5696 equivalent TA-3207 2sc5696 transistor using of damper in Horizontal Output Transistor TA-2994
Contextual Info: Ordering number : ENN6663A 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

SPW 078

Abstract: pst 39 transformer Wabash Transformer spw -136 spw+-079+transformer 4-07-7016 MT12/SPW 078 spw -055 transformer pc-24-450 TRANSFORMER 4-44-5010
Contextual Info: WabashTransformer.com ● Class 2, VDE, UL, CSA Recognized ● Zero Defect, 100 % Tested ● Competitive Prices ● Standard & Custom Designs ● 2 Year Warranty Table of Contents Product Description Class 2 CL UL5085-3 Transformer International Power Transformer

70306

Abstract: MCH6615 IT0251
Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low

IT0251

Abstract: ta2909 MCH6614 TA-2909
Contextual Info: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

2062a

Abstract: 2SJ289 2SJ28 18V00
Contextual Info: 注文コード No. N 6 6 0 9 2SJ289 No. N 6 6 0 9 90100 新 2SJ289 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

SVC325

Abstract: IT0251
Contextual Info: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.

2sc5694

Abstract: IT02348 2SA2037 ENN6587
Contextual Info: Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and printer drivers. unit : mm 2042B [2SA2037 / 2SC5694]

TA-2474

Abstract: FTS1011 S1011 ta2474 A3100
Contextual Info: Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. 2.5V drive. Mounting height 1.1mm. unit : mm 2147A [FTS1011] 3.0 0.65 5 4.5 6.4 0.5 8 0.425 0.95

2SK3448

Abstract: N1500 TA-2921
Contextual Info: Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3448] 2.5 1.45 1.0

MCH6403

Abstract: TA-2908 N1500
Contextual Info: Ordering number : ENN6780 MCH6403 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6403] 0.25 • Package Dimensions 0.3 5 2 3 0.65 0.25 1 0.15

MCH6626

Contextual Info: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling

Contextual Info: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling

Contextual Info: Ordering number: ENN6787 P-Channel Silicon MOSFET FSS140 Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4.0V drive. unit : mm 2116 [FSS140] R H . . H R 1 : Source 2 : Source 3 : Source B 1 T Ï Ï

transistor SM 2174

Abstract: tt2050 ENN6674 IT025
Contextual Info: Ordering number : ENN6674 j _ NPN Triple Diffused Planar Silicon Transistor TT2050 IsatlYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.

Contextual Info: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.