ISM MOSFET 10W Search Results

800w rf power amplifier circuit diagram

Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Contextual Info: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in

Contextual Info: Advanced Power MOSFET S FEATURES • ■ ■ ■ ■ ■ ■ S H 2 5 N 4 0 A BV0SS = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max @ Vos*400V

Contextual Info: IR F M 2 1 4 A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jjA M a x. @ VDS= 250V

c25 diode to220

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns

6x marking sot-23 p-channel

Abstract: mosfet ir 840 SOT-23 C015
Contextual Info: PD- 91848B IRLMS6802 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 D 3 4 S VDSS = -20V D G RDS on = 0.050W Top View Description These P-Channel MOSFETs from International Rectifier

Contextual Info: SP8M70 Dual N & Pch Power MOSFET Datasheet lOutline Symbol Tr1: Nch Tr2: Pch VDSS 250V -250V RDS on (Max.) 1.63W ID 3.0A PD (8) SOP8 (7) (6) (5) 2.8W (1) (2) -2.5A (3) (4) 2.0W lFeatures lInner circuit 1) Low on-resistance. (1) (2) (3) (4) 2) Fast switching speed.

Connector WPC

Contextual Info: User's Guide SLVU824A – January 2013 – Revised January 2013 bq500211A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The

BQ500211

Abstract: lg led tv electronic diagram
Contextual Info: User's Guide SLVU536A – June 2012 – Revised October 2012 bq500211 bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

TXL12RFP01

Contextual Info: User's Guide SLVU688A – October 2012 – Revised December 2012 bq500410A bqTESLA Wireless Power Transmitter EVM The bq500410AEVM-085 EVM wireless power transmitter evaluation module from Texas Instrument is a high-performance, easy-to-use development tool for wireless power solutions. The transmitter module is a

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

Tektronix 2712

Abstract: 0805C104KAT2A
Contextual Info: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced

1740Q

Contextual Info: CPClare ITC117P Application Note CORPORATION ITC117P Application Note CP C lare’s Integrated Telecom Circuit ITC117P features com bined circuitry in one 16-Pin SOIC package for: • 1 Form A S o lid S ta te R e lay fo r use as Hookswitch ■ Bridge Rectifier

RE1L002SN

Contextual Info: RE1L002SN Datasheet Nch 60V 250mA Small Signal MOSFET lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

RE1L002

Abstract: RE1L002SN
Contextual Info: RE1L002SN RE1L002SN Datasheet Nch 60V 250mA Small Signal MOSFET lOutline VDSS 60V RDS on (Max.) 2.4W ID 250mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.

300 to 50 Ohm RF transformer

Abstract: MHz-150W resistor 680 ohm
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

uhf 150w mosfet

Abstract: SD2931 SD2931-10 TSD2931-10 VK200 resistor 330 Ohm
Contextual Info: SD2931-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA ν ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

RF POWER TRANSISTOR

Abstract: arco capacitors choke vk200 SD2931 SD2931-10 VK200
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

resistor 680 ohm

Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Power Transformer EE-19

Abstract: resistor 680 ohm EE-19 transformer SD2931-10 vk200 rf choke SD2931 VK200
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

resistor 680 ohm

Abstract: SD2931
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Contextual Info: ZDX130N50 Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

ZDX130

Contextual Info: ZDX130N50 Nch 500V 13A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID -13A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: ZDX050N50 Nch 500V 5A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 1.5W ID 5A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.