ISD 1790 Search Results

EIA-541

Abstract: F7101 IRF7101 IRF7907PBF
Contextual Info: PD - 97066 IRF7907PbF HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

Contextual Info: STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET VI DeepGATE™ Power MOSFETs Datasheet - production data Features Order codes TAB VDS RDS on max ID 40 V 1.15 mΩ 180 A TAB STH400N4F6-2 STH400N4F6-6 2 7 3 1 1 H2PAK-2

IRF7907PBF

Contextual Info: PD - 97066A IRF7907PbF HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box 30V ID RDS on max Q1 16.4m:@VGS = 10V Q2 11.8m:@VGS = 10V  6 '    * '  

isd 1790

Abstract: IRF7907PBF
Contextual Info: PD - 97066A IRF7907PbF HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box 30V ID RDS on max Q1 16.4m:@VGS = 10V Q2 11.8m:@VGS = 10V  6 '    * '  

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

IRF6797MTR1PBF

Abstract: IRF6797MTRPBF
Contextual Info: PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V

IRF6797MTRPbF

Abstract: isd 1790 IRF6797MTR1PBF
Contextual Info: PD - 97320 IRF6797MPbF IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V

Contextual Info: PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V

FDD4685

Abstract: 84A2
Contextual Info: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications „ Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A „ Inverter „ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A „ Power Supplies „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low

Contextual Info: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications ̈ Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A ̈ Inverter ̈ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A ̈ Power Supplies ̈ Typ Qg(TOT) = 19nC at VGS = -5V ̈ High performance trench technology for extremely low

mx 362-0

Abstract: LV432403X63A400 29450 SCHNEIDER LV432757 Schneider NSX 400 F schneider NS1250 MICROLOGIC 2.0 LV431411X62A250 EZC100N3040 LV4A3F100100B4 LV429270
Contextual Info: Price List Low Voltage Distribution Products With effect from February 01, 2013 Price List Contents Prisma iPM: A range of Kit based LV panels . . . . . . . . . . . . . 1 EasyPact EZC: b MCCBs for Distribution Network . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: CSD25402Q3A www.ti.com SLPS454 – DECEMBER 2013 20 V P-Channel NexFET Power MOSFET Check for Samples: CSD25402Q3A FEATURES 1 • • • • • • 2 PRODUCT SUMMARY Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS on Pb and Halogen Free RoHS Compliant

Contextual Info: CSD25402Q3A www.ti.com SLPS454 – DECEMBER 2013 20 V P-Channel NexFET Power MOSFET Check for Samples: CSD25402Q3A FEATURES 1 • • • • • • 2 PRODUCT SUMMARY Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS on Pb and Halogen Free RoHS Compliant

Contextual Info: CSD25402Q3A www.ti.com SLPS454 – DECEMBER 2013 20 V P-Channel NexFET Power MOSFET Check for Samples: CSD25402Q3A FEATURES 1 • • • • • • 2 PRODUCT SUMMARY Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS on Pb and Halogen Free RoHS Compliant

Contextual Info: IBM13M32734BCD 32M x 72 2-B an k R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: I 1n ! -260,-3 60 j j j.;.1U . L J P C 1 0 0 J u n i t s |

CDM-AEC-Q100-011

Abstract: isd 1790 Powersso-12 ISO7637 VND5050AJ-E VND5050AJTR-E VND5050AK-E VND5050AKTR-E monolithic circuit layout VND5050AKTRE
Contextual Info: VND5050AJ-E VND5050AK-E Double channel high side driver with analog current sense for automotive applications Features General Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ)

VN5772AK-E

Abstract: OMNIFET 16084 current sensing DC motor schematic diagram pulse load calculation formula for single pulse CDM-AEC-Q100-011 AC motor current limiter board
Contextual Info: VN5772AK-E Quad smart power solid-state relay for complete H-bridge configurations Features Type RDS on VN5772AK-E (1) 100 mΩ IOUT (2) 18 A VCC 36 V SO-28 1. Total resistance of one side in bridge configuration. 2. Typical current limitation value. Description

VIPower M05

Contextual Info: VN5772AK-E Quad smart power solid-state relay for complete H-bridge configurations Features SO-28 Type RDS on IOUT VCC VN5772AK-E 100 mΩ(1) 18 A(2) 36 V 1. Total resistance of one side in bridge configuration. Description 2. Typical current limitation value.

Contextual Info: VND5050AJ-E VND5050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ)

VN5772AK-E

Contextual Info: VN5772AK-E Quad smart power solid-state relay for complete H-bridge configurations Features SO-28 Type RDS on IOUT VCC VN5772AK-E 100 mΩ(1) 18 A(2) 36 V 1. Total resistance of one side in bridge configuration. Description 2. Typical current limitation value.

Contextual Info: VN5772AK-E Quad smart power solid-state relay for complete H-bridge configurations Features SO-28 Type RDS on IOUT VCC VN5772AK-E 100 mΩ(1) 18 A(2) 36 V 1. Total resistance of one side in bridge configuration. Description 2. Typical current limitation value.

CDM-AEC-Q100-011

Abstract: ISO7637 VND5050AJ-E VND5050AK-E PowerSS0-24
Contextual Info: VND5050AJ-E VND5050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ)

Contextual Info: VN5772AK-E Quad smart power solid-state relay for complete H-bridge configurations Features SO-28 Type RDS on IOUT VCC VN5772AK-E 100 mΩ(1) 18 A(2) 36 V 1. Total resistance of one side in bridge configuration. Description 2. Typical current limitation value.

CDM-AEC-Q100-011

Abstract: ISO7637 VND5050AJ-E VND5050AK-E
Contextual Info: VND5050AJ-E VND5050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ)