ISD 1400 D Search Results

Contextual Info: INFORMATION STORAGE C! DEVICES ChipCorder' TKHNOLOCYirHO ISD 1400 Series Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations FEATURES • Easy-to-use single-chip voice record/ playback solution Fully addressable to handle multiple messages

Contextual Info: PRELIMINARY DATA SHEET “ “ IS D 1 2 0 0 /1 4 0 0 S e r ie s Single-Chip Voice Record/Playback Devices 10-, 12-, 16-, and 20-Second Durations d e v ic e s GENERAL DESCRIPTIO N FEATURES Information Storage Devices' ISD 1200/1400 ChipCorder Series provides high-quality, single-chip record/playback

irfi4229

Abstract: irp 540 irf 540 mosfet 0.3uF 50V IRFI4229PBF IRF 426 IRF 450 MOSFET mosfet 250v 21a to-220ab
Contextual Info: PD - 97201B IRFI4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can

IRL2910

Abstract: IRLI2910 IRL2910 equivalent
Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

NZMB1

Abstract: NZMH2 NZMH2-A100 moeller 1250 NZMH HPL0211 NZMH2-M100 EN 60947 VDE 0660
Contextual Info: N E W Moeller HPL0211-2003/2004 11/5 Moeller HPL0211-2003/2004 Overview Circuit-breakers, switch-disconnectors Overview Circuit-breakers, switch-disconnectors Circuit-breaker with main switch characteristics conform to IEC/EN 60204 and isolating characteristics conform to IEC/EN 60947, VDE 0660

AULS4030

Abstract: auirl AUIRLS4030-7P auirls4030
Contextual Info: PD - 96399 AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

1350B

Abstract: IRL530N IRLI530N
Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V

Contextual Info: LT1942 Quad DC/DC Converter for Triple Output TFT Supply Plus LED Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1942 is a highly integrated quad switching regulator designed to provide all necessary power supply functions for TFT displays, including the white LED

IRL2910

Abstract: IRLI2910 yb 27 BR MOSFET
Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

1350B

Abstract: IRL530N IRLI530N
Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P10 Power MOSFET 100V, 19A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L1186 CMOS IC 600mA CMOS LDO 4 5 „ DESCRIPTION The UTC L1186 is a COMS positive linear regulator. One of its features is the very low quiescent current typical as low as 30 A and its dropout voltage is extremely low with 600mA output current.

APM4568

Abstract: APM4568A APM4568AK N-Channel vgs 40V MOSFET pch 1275
Contextual Info: APM4568AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

APM4568

Abstract: apm*4568 APM4568K STD-020C
Contextual Info: APM4568K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

apm4588

Abstract: APM4588K STD-020C
Contextual Info: APM4588K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 60V/5A, RDS(ON) = 38mΩ (typ.) @ VGS = 10V RDS(ON) = 55mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -60V/-3.5A, RDS(ON) = 80mΩ (typ.) @ VGS =-10V

11N4

Abstract: 11N40
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for

AUIRLS4030-7P

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

IRF3415

Abstract: K 9008
Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

820PF

Abstract: 47pF capacitor LT1310EMSE LT1372 UPS120 CDRH5D18-4R1 CDRH5D28-5R3 LT1310
Contextual Info: LT1310 1.5A Boost DC/DC Converter with Phase-Locked Loop U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1310 boost DC/DC converter combines a 1.5A current mode PWM switcher with an integrated phaselocked loop, allowing the user to set the switching frequency anywhere from 10kHz to 4.5MHz. Intended for use

CDRH4D28

Abstract: LTC3458L LTC3458LEDE MSS5131 MSS7341 RLF5018T SLF7045 LXHL
Contextual Info: LTC3458L 1.7A, 1.5MHz Synchronous Step-Up DC/DC Converter with Output Disconnect DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ High Efficiency: Up to 95% Inrush Current Limiting and Output Disconnect Programmable Output Voltages up to 6V 1.5V to 6V Input Range