ISD 1400 D Search Results

Contextual Info: INFORMATION STORAGE C! DEVICES ChipCorder' TKHNOLOCYirHO ISD 1400 Series Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations FEATURES • Easy-to-use single-chip voice record/ playback solution Fully addressable to handle multiple messages

Contextual Info: PRELIMINARY DATA SHEET “ “ IS D 1 2 0 0 /1 4 0 0 S e r ie s Single-Chip Voice Record/Playback Devices 10-, 12-, 16-, and 20-Second Durations d e v ic e s GENERAL DESCRIPTIO N FEATURES Information Storage Devices' ISD 1200/1400 ChipCorder Series provides high-quality, single-chip record/playback

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can

IRL2910

Abstract: IRLI2910 IRL2910 equivalent
Contextual Info: PD - 9.1384B IRLI2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description

NZMB1

Abstract: NZMH2 NZMH2-A100 moeller 1250 NZMH HPL0211 NZMH2-M100 EN 60947 VDE 0660
Contextual Info: N E W Moeller HPL0211-2003/2004 11/5 Moeller HPL0211-2003/2004 Overview Circuit-breakers, switch-disconnectors Overview Circuit-breakers, switch-disconnectors Circuit-breaker with main switch characteristics conform to IEC/EN 60204 and isolating characteristics conform to IEC/EN 60947, VDE 0660

1350B

Abstract: IRL530N IRLI530N
Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L1186 CMOS IC 600mA CMOS LDO 4 5 „ DESCRIPTION The UTC L1186 is a COMS positive linear regulator. One of its features is the very low quiescent current typical as low as 30 A and its dropout voltage is extremely low with 600mA output current.

APM4568

Abstract: APM4568A APM4568AK N-Channel vgs 40V MOSFET pch 1275
Contextual Info: APM4568AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

Contextual Info: APM9938K Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 D1 D2 D2 N-Channel 20V/10A, RDS(ON)=13mΩ (typ.) @ VGS=4.5V RDS(ON)=22mΩ (typ.) @ VGS=2.5V • S1 G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35mΩ (typ.) @ VGS=-4.5V

APM4568

Abstract: apm*4568 APM4568K STD-020C
Contextual Info: APM4568K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

11N4

Abstract: 11N40
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for

AUIRLS4030-7P

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can

IRF3415

Abstract: K 9008
Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

820PF

Abstract: 47pF capacitor LT1310EMSE LT1372 UPS120 CDRH5D18-4R1 CDRH5D28-5R3 LT1310
Contextual Info: LT1310 1.5A Boost DC/DC Converter with Phase-Locked Loop U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1310 boost DC/DC converter combines a 1.5A current mode PWM switcher with an integrated phaselocked loop, allowing the user to set the switching frequency anywhere from 10kHz to 4.5MHz. Intended for use

CDRH4D28

Abstract: LTC3458L LTC3458LEDE MSS5131 MSS7341 RLF5018T SLF7045 LXHL
Contextual Info: LTC3458L 1.7A, 1.5MHz Synchronous Step-Up DC/DC Converter with Output Disconnect DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ High Efficiency: Up to 95% Inrush Current Limiting and Output Disconnect Programmable Output Voltages up to 6V 1.5V to 6V Input Range

UTC7N65

Abstract: 7n65 7N65L-TQ2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: STD50NH02L N-CHANNEL 20V - 0.0085 Ω - 50A DPAK STripFET III POWER MOSFET PRELIMINARY DATA TYPE STD50NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.010 Ω 50 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

Contextual Info: LTC3458L 1.7A, 1.5MHz Synchronous Step-Up DC/DC Converter with Output Disconnect DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ High Efficiency: Up to 95% Inrush Current Limiting and Output Disconnect Programmable Output Voltages up to 6V 1.5V to 6V Input Range

APM4568

Abstract: APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel
Contextual Info: APM4568J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -40V/-6A, RDS(ON) =36mΩ (typ.) @ VGS =-10V