ISD 100A Search Results

SF3031L

Abstract: IPS021L 6210s IPS0151 IPS0151S IPS021 IPS021S IPS031 IPS031G IPS031S
Contextual Info: International Rectifier Automotive Intelligent Power Switch Navigator Topology Low S i de Rds on @25ºC (mΩ) Over-current protecti on 5 100A lsd (latched) latched 25 35A Isd (latched) latched 60 12A Isd (latched) latched 70 12A Isd (latched) latched 150

IPS521

Abstract: IPS5451 IPS022G IPS511 IPS511G IPS511S IPS512G IPS514G IPS521G IPS521S
Contextual Info: International Rectifier Industrial IC Navigator IPS Topology Low S i de Low S i de 2 channels Rds(on) @25ºC (mΩ) Over-current protection 5 100A lsd (latched) latched 25 35A Isd (latched) latched Over-temperature protection (165ºC) 60 12A Isd (latched)

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STY100NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STY100NS20FD

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET TYPE STY100NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

STY100NS20FD

Contextual Info: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET n n n n n n n TYPE VDSS RDS on ID STY100NS20FD 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V

3240A

Abstract: STP100NF04L
Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of

Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036Ω - 100A TO-220 STripFET POWER MOSFET TYPE STP100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power Mosfet is the latest development of

STP100NF04L

Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V

Contextual Info: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009" G ID = 100A… S Description

3240A

Abstract: STB100NF04L
Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

STB100NF04L

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036Ω - 100A D2PAK STripFET POWER MOSFET TYPE STB100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power Mosfet is the latest development of

Contextual Info: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

IRF1104

Contextual Info: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

40V 60A MOSFET

Abstract: IRF1104
Contextual Info: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

B100NF04L

Abstract: B100NF STB100NF04LT4 B100NF* Datasheet STB100NF04L STB100NF04L-1
Contextual Info: STB100NF04L STB100NF04L-1 N-CHANNEL 40V - 0.0036 Ω - 100A D²PAK/I²PAK STripFET II POWER MOSFET TYPE VDSS RDS on ID STB100NF04L STB100NF04L-1 40 V 40 V <0.0042Ω <0.0042Ω 100 A 100 A • ■ ■ ■ TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE

STP100NF04L

Abstract: ISD 100a
Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION

B100NF04

Abstract: B100NF B100NF04L STB100NF04L STB100NF04L-1 STB100NF04LT4
Contextual Info: STB100NF04L STB100NF04L-1 N-CHANNEL 40V - 0.0036 Ω - 100A D²PAK/I²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB100NF04L STB100NF04L-1 40 V 40 V <0.0042Ω <0.0042Ω 100 A 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE

STSJ100NH3LL

Contextual Info: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

Contextual Info: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS R DS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

Y100NS20FD

Abstract: ISD100A STY100NS20FD mosfet 100A ST ISD 100a JESD97
Contextual Info: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating

HRF3205 equivalent

Abstract: HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205S HRF3205ST TB334 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode