IRLML6402 MICRO3 Search Results

ML5203

Abstract: IRLML6402 sot-23 marking code pe irlml2803 AN-994 IRLML6402 micro3 93755C irlml6402 in TO-92
Contextual Info: PD - 93755C IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6402 micro3

Abstract: SOT-23 marking .633 10 g 990 IRLML6402 93755D
Contextual Info: PD - 93755D IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = -20V 3 D S RDS(on) = 0.065Ω 2 Description These P-Channel MOSFETs from International Rectifier utilize

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Contextual Info: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6402

Abstract: irlml6402 sot23 ir JT2000 IRLML2803 Micro3 AN-994 IRLML2402 IRLML5103 IRLML6302 marking BSs sot23
Contextual Info: P D -93755 International 3BR Rectifier IR L M L 6 4 0 2 HEXFET Power MOSFET Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V d s s = -2 0 V RüS(on) = 0.065Î2 Description These P-Channel MOSFETs from International Rectifier utilize

sot-23 marking code pe

Abstract: IRLML6401 SOT-23 MARKING tAN SOT-23 gi 9532 MARKING EK SOT-23 marking bad sot-23 IRLML5103 irlml2402 IRLML2803 IRLML6401
Contextual Info: IRLML2402 Package Outline HEXFET MICRO3 SOT-23 Outline Dimensions are shown in millimeters (inches) D - B - 3 E -A - L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN 3 3 D IM A H 1 0 . 20 ( .0 0 8 ) 2 M A M e e1 θ A -C B 0. 1 0 (.0 0 4 )

IRLML6401 SOT-23

Abstract: j y w sot23 irlml2502 IRLML6302 h d 2001 Micro3 IRLML6402 IRLML5203 IRL*5103 IRLML5203 H
Contextual Info: Micro3 SOT-23/TO-236AB W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR PART NUMBER PART NUMBER CODE REFERENCE: YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 A = IRLML2402 B = IRLML2803 C = IRLML6302 D= E= F= G=

IRLML2402

Abstract: IRLML5103 IRLML6302 IRLML5203 IR
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

marking code IRLML2502

Abstract: irlml application IRLML2502 IRLML2502 IRLML2502 G IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6401
Contextual Info: PD - 93757C IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier

Contextual Info: PD - 93757C IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier

irlml2502

Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

irlml2803 B

Abstract: IRLML6401 IRLML2502 G irlml5103 1D IRLML5203 H IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402
Contextual Info: PD - 91258D IRLML2803 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 30V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier

irlml2402

Abstract: IRLML5203 irlml5203 H IRLML6302
Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

IRLML6302 marking

Abstract: irlml2402 marking code IRLML2502 IRLML6302 IRLML6401 SOT-23 marking code IRLML6401
Contextual Info: PD - 91259E IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

ML5203

Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23
Contextual Info: IRLML6402PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

IRLML9301TR

Abstract: IRLML9301TRPBF IRLML9301 IRLML9303 IRLML0030 irlml2060 IRLML0100 IRLML2030 IRLML0040 irlml0060
Contextual Info: PD - 96310B IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

Contextual Info: PD - 97631 IRLML2244TRPbF VDS -20 V VGS Max ± 12 V RDS on max 54 mΩ 95 mΩ (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML2244TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

IRLML2244

Abstract: irlml2246 IRFML9244 irlml6346 IRLML2244TRPBF ML8244 IRLML2244TR IRLML9303 IRLML6244 IRLML6344
Contextual Info: PD - 97631 IRLML2244TRPbF VDS -20 V VGS Max ± 12 V RDS on max 54 mΩ 95 mΩ (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML2244TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

MARKING EK SOT-23

Contextual Info: PD - 97157 IRLML0100TRPbF HEXFET Power MOSFET VDS 100 V VGS Max ± 16 V RDS on max 220 m : 235 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML0100TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits

IRLML2030TRPBF

Contextual Info: PD - 97432 IRLML2030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 20 V RDS on max 100 m : 154 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML2030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features

Contextual Info: PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 29 mΩ 37 mΩ RDS on max (@VGS = 4.5V) G 1 3 D S RDS(on) max (@VGS = 2.5V) Micro3TM (SOT-23) IRLML6344TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits

irlml6346

Abstract: IRLML6344 IRLML6344TR irlml6244 IRLML6246 IRLML9303 irlml2060 IRLML9301 IRLML6344TRPBF IRLML0060
Contextual Info: PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 29 mΩ 37 mΩ RDS on max (@VGS = 4.5V) G 1 3 D S RDS(on) max (@VGS = 2.5V) Micro3TM (SOT-23) IRLML6344TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ)

IRLML0060

Abstract: IRLML0030 IRLML0100 IRLML2030 IRLML0040 IRLML2030TRPBF marking code IRLML2502 IRLML2402 d020d IRLML5103
Contextual Info: PD - 97432 IRLML2030TRPbF HEXFET Power MOSFET VDS VGS Max 30 ± 20 V V RDS on max 100 m : 154 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML2030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features