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    IRL 80 A Search Results

    IRL 80 A Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRL 80 A
    Infineon Technologies IrED, Single, 950nm Wave Length Original PDF 97.7KB 4
    IRL 80A
    Infineon Technologies GaAIAs IRED, Long-Term Stability, Wide beam, Matches phototransistor LPT80A Original PDF 97.69KB 4
    IRL80A
    OSRAM GaAs-Infrarot-Sendediode GaAs Infrared Emitter Original PDF 74.6KB 4
    IRL80A
    OSRAM LED, GaAs Infrared Emitter Original PDF 97.69KB 4
    IRL80A
    OSRAM Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 950NM CLR SIDELOOKER Original PDF 10
    IRL80A
    Siemens GaAs-Infrarot-Sendediode GaAs Infrared Emitter Original PDF 125.95KB 3
    SF Impression Pixel

    IRL 80 A Price and Stock

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    ams OSRAM Group IRL-80A

    EMITTER IR 950NM 60MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL-80A Bulk
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    Swivellink SLM-661-AI-RL

    Cobot Accessories METRIC ADVANCED ILLUMINATION MTG PLATE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLM-661-AI-RL
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    Swivellink AFSB-661-AI-RL

    Cobot Accessories ADVANCED ILLUMINATION MTG PLATE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AFSB-661-AI-RL
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    ITT Interconnect Solutions CIR00AL-18-10S-F80-VO

    Standard Circular Connector
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    Mouser Electronics CIR00AL-18-10S-F80-VO
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    • 100 $96.26
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    Siemens IRL80A

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    Bristol Electronics IRL80A 494
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    IRL 80 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GEO06391

    Abstract: OHFD1422 Q68000-A7852 IRL81
    Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


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    Q68000-A7852 OHF00345 GEO06391 GEO06391 OHFD1422 Q68000-A7852 IRL81 PDF

    OSRAM IR emitter IRL

    Abstract: GEOY6391 OHFD1422 Q68000-A7852
    Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


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    Q68000-A7852 OSRAM IR emitter IRL GEOY6391 OHFD1422 Q68000-A7852 PDF

    Fototransistor

    Abstract: GEOY6461 Q68000-A7851 IRL80A LPT80A diode Sr 203
    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


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    GEOY6461 Fototransistor GEOY6461 Q68000-A7851 IRL80A LPT80A diode Sr 203 PDF

    fototransistor

    Abstract: LPT80A Q68000-A7851 fototransistor if
    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


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    PDF

    GEOY6461

    Abstract: Q68000-A7851 Infrared Emitting Diode Pink
    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Rosa Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


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    Q68000-A7851 GEOY6461 Q68000-A7851 Infrared Emitting Diode Pink PDF

    OHLY0598

    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


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    Q68000A7851 OHLY0598 PDF

    OHLY0598

    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


    Original
    Q68000A7851 OHLY0598 PDF

    CECC 00802

    Abstract: IRL80A
    Contextual Info: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


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    Q68000A7851 720-IRL80A CECC 00802 IRL80A PDF

    Q62703Q1820

    Abstract: Q62703Q5195 20MS Q62702-Q1745
    Contextual Info: IR-LUMINESZENZDIODEN INFRARED EMITTERS 3. Emitter im Plastikgehäuse Package T 1¾ λpeak 3. Emitters in Plastic Package ϕ deg. Ie VF nm mW/sr V IRL 81 A 880 ± 25 ≥ 1.0 1.5 SFH 484 SFH 484-2 880 ±8 ≥ 50 ≥ 80 SFH 486 880 ± 11 SFH 485-2 880 SFH 487


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    Q68000-A8000 Q62703-Q1092 Q62703-Q1756 Q62703-Q1094 Q62703-Q1547 Q62703-Q1095 Q62703-Q2174 Q62702-P5524 Q62702-P5525 Q62702-P5526 Q62703Q1820 Q62703Q5195 20MS Q62702-Q1745 PDF

    OHF04132

    Abstract: IEC 62471 osram OS-PCN-2011-003-A IEC 61760-1
    Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant IRL 81 A gemäß OS-PCN-2011-003-A acc. to OS-PCN-2011-003-A Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung


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    OS-PCN-2011-003-A OS-PCN-2011-003-A OHF04132 IEC 62471 osram IEC 61760-1 PDF

    Contextual Info: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage.


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    SDM-08060-B1F SDM-08060-B1F EDS-104208 AN054, PDF

    Contextual Info: Product Description SDM-08060-B1F The SDM-08060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop-in, no-tune solution for high power applications requiring high


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    SDM-08060-B1F SDM-08060-B1F Descript28V, 800mA 700mA 500mA 400mA 400mA 600mA PDF

    60W POWER AMPLIFIER

    Abstract: SDM-08060-B1F dual gsm repeater IM750 IMDS
    Contextual Info: Product Description SDM-08060-B1F The SDM-08060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop-in, no-tune solution for high power applications requiring high


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    SDM-08060-B1F SDM-08060-B1F 800mA 700mA 600mA 500mA 400mA EDS-104208 60W POWER AMPLIFIER dual gsm repeater IM750 IMDS PDF

    GSM repeater circuit

    Abstract: LDMOS push pull SDM-08060-B1F
    Contextual Info: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high


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    SDM-08060-B1F SDM-08060-B1FY SDM-08060-B1F Bal45 EDS-104208 AN054, GSM repeater circuit LDMOS push pull PDF

    electronique

    Abstract: data book electronique award award 1998
    Contextual Info: Xilinx Receives Three IRL Industry Awards be recognized with other winners at an award ceremony in October in Chicago during the National Communications Forum, a networking and The Xilinx IRL methodology combines computer net works, the Java programming language, and the new communications conferXilinx Virtex FPGAs, to create a new class of electronicence.


    Original
    PDF

    Contextual Info: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high


    Original
    SDM-08060-B1F SDM-08060-B1FY EDS-104208 AN054, PDF

    fototransistor

    Abstract: fototransistor if Q68000-A8000 IRL81
    Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter IRL 81 A Wesentliche Merkmale • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Klares Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig • Lange Lebensdauer Langzeitstabilität


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    OHR01425 fototransistor fototransistor if Q68000-A8000 IRL81 PDF

    RF power amplifier MHz

    Abstract: SDM-09060
    Contextual Info: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power


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    SDM-09060-B1F SDM-09060-B1FY EDS-104211 AN054, RF power amplifier MHz SDM-09060 PDF

    Contextual Info: SDM-09060-B1F Product Description 925-960 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original
    SDM-09060-B1F SDM-09060-B1F EDS-104211 AN054, PDF

    LDMOS push pull

    Abstract: SDM-09060-B1F RF power amplifier MHz
    Contextual Info: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power


    Original
    SDM-09060-B1F SDM-09060-B1FY SDM-09060-B1F Gnd-45 EDS-104211 AN054, LDMOS push pull RF power amplifier MHz PDF

    GEOY6461

    Abstract: OHLY0598
    Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig


    Original
    PDF

    OHLY0598

    Contextual Info: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig


    Original
    PDF

    photointerrupter

    Abstract: aot 430
    Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features


    OCR Scan
    GE006391 Q68000-A7852 photointerrupter aot 430 PDF

    AN054

    Abstract: SDM-09120
    Contextual Info: SDM-09120 SDM-09120Y Product Description RoHS Compliant Pb & Green Package 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


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    SDM-09120 SDM-09120Y SDM-09120 AN054, EDS-103478 AN054 PDF