IRL 540 Search Results

CEE 32A plug

Abstract: CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A
Contextual Info: Plugs for the world UK / IRL 2 International approvals. MENNEKES plugs and receptacles conform to relevant in other countries, in particular countries whose national and international standards. Plugs and national test marks are given below. Due to special

MRF18085A

Abstract: AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1938/D AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads Freescale Semiconductor, Inc. Prepared by: Béatrice Branger and Olivier Lembeye

AN054

Abstract: SDM-09120
Contextual Info: SDM-09120 SDM-09120Y Product Description RoHS Compliant Pb & Green Package 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-09120-1Z Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Z 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Pout-120

Contextual Info: SDM-09120 SDM-09120Y Product Description RoHS Compliant Pb & Green Package 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-08120 Product Description 869-894 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-08120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-09120 SDM-09120Y Product Description RoHS Compliant Pb & Green Package 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

120W amplifier

Abstract: SDM-09120 q458
Contextual Info: SDM-09120 Product Description 925-960 MHz Class AB 120W Power Amplifier Module The SDM-09120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a

SDM-08120

Contextual Info: SDM-08120 SDM-08120Y Product Description Sirenza Microdevices’ SDM-08120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power

Contextual Info: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-08120 SDM-08120Y Product Description Sirenza Microdevices’ SDM-08120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power

Contextual Info: SDM-09120 Product Description 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

ATC100A101JT150XT

Abstract: atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

Contextual Info: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

Contextual Info: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and

GRM55DR61H106KA88B

Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The MHVIC Line 921 MHz - 960 MHz SiFET Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

HDR2X10STIMCSAFU

Abstract: MHVIC910HR2 J559
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,

HDR2X10

Abstract: 2052-1618 HDR2X10STIMCSAFU MHVIC910HR2 2052161802 J596
Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

HDR2X10STIMCSAFU

Abstract: MHVIC910HR2 c66c1
Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The MHVIC Line 921 MHz - 960 MHz SiFET Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

MHVIC910HR2

Abstract: A113 HDR2X10STIMCSAFU MHVIC910HNR2 J5-96
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and

ipc 840

Contextual Info: Freescale Semiconductor Technical Data MHVIC910HR2 Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP−16 package has had lead−free terminations from its initial release. MHVIC910HR2 921 MHz − 960 MHz SiFET