IRL 540 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

MRF9135LSR3

Contextual Info: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad

Contextual Info: in te i 82C54 CHMOS PROGRAMMABLE INTERVAL TIMER Compatible with all Intel and most other microprocessors • Three independent 16-bit counters ■ Low Power CHMOS — Ice = 10 mA @ 8 MHz Count frequency High Speed, “Zero Wait State” Operation with 8 MHz 8086/88 and