IRKD Search Results

Contextual Info: Bulletin I27403 rev. B 09/06 IRKDL450.S20 SERIES SUPER MAGN-A-pakTM Power Modules FAST DIODES Features 460 A High power FAST recovery diode series High current capability 3000 VRMS isolating voltage with non-toxic substrate High surge capability High voltage ratings up to 2500V

Contextual Info: Bulletin PD-21073 08/05 IRKDU162/12 HexfredTM Utrafast DIODES INT-A-pakTM Power Modules Features Electrically isolated: DBC base plate 100 A 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability

Contextual Info: IRKD192-08 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current190 @Temp (øC) (Test Condition)85 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5760 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)597 @Temp. (øC) (Test Condition)

Contextual Info: IRKD270-14 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD260-16 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current260 @Temp (øC) (Test Condition)90 V(RRM)(V) Rep.Pk.Rev. Voltage1.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8800 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)816 @Temp. (øC) (Test Condition)

Contextual Info: IRKD236-24N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current230 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage2.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.5k V(FM) Max.(V) Forward Voltage1.26 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: IRKD250-06 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current250 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.18k V(FM) Max.(V) Forward Voltage1.29 @I(FM) (A) (Test Condition)785 @Temp. (øC) (Test Condition)150õ

irf e78996

Abstract: E78996 GTO MODULE IRK E78996 p432 IRKDL450
Contextual Info: Bulletin I27403 rev. A 09/97 IRKDL450.S20 SERIES SUPER MAGN-A-pak TM Power Modules FAST DIODES Features 460 A High power FAST recovery diode series High current capability 3000 V RMS isolating voltage with non-toxic substrate High surge capability High voltage ratings up to 2500V

40HF

Contextual Info: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical

IRKJ

Contextual Info: IRK. 196 Series Power Module 195 Amp IRKD IRKC 1 IRKJ 1 1 IRKE 1 3 1 1 1 1 2 2 2 2 2 2 2 2 2 1 3 Tj = 25 OC unless stated otherwise 3 3 MAXIMUM RATINGS 3 3 3 Case Style : Triple Flatop 3 * Insert "D" "C" "J" or "E" for circuit configuration Symbol IRK (*)

Contextual Info: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical

Contextual Info: Bulletin I27264 rev. A 11/06 IRKDS408/060P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKDS408. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical

Contextual Info: IRKD236-14 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current230 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.5k V(FM) Max.(V) Forward Voltage1.26 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: IRKD166-12N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0k V(FM) Max.(V) Forward Voltage1.57 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: IRKD236-20N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current230 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage2000 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5750 V(FM) Max.(V) Forward Voltage1.26 @I(FM) (A) (Test Condition)722 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD236-16N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current230 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5750 V(FM) Max.(V) Forward Voltage1.26 @I(FM) (A) (Test Condition)722 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD200-04 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200 @Temp (øC) (Test Condition)25õ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.9.0k V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)200 @Temp. (øC) (Test Condition)25õ

Contextual Info: IRKD240-14 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200 @Temp (øC) (Test Condition)25õ V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)200 @Temp. (øC) (Test Condition)25õ

E78996 datasheet bridge

Abstract: IR E78996 E78996 E78996 datasheet E78996 rectifier module IRKD600 KD600
Contextual Info: Bulletin I27402 rev. B 09/06 IRKD600. SERIES SUPER MAGN-A-pakTM Power Modules STANDARD DIODES Features High current capability 3000 VRMS isolating voltage with non-toxic substrate 600 A High surge capability High voltage ratings up to 2000V Industrial standard package

IRKDL450

Contextual Info: Bulletin I27403 IRKDL450.S20 SERIES SUPER MAGN-A-pak TM Power Modules FAST DIODES Features 460 A High power FAST recovery diode series High current capability 3000 VRMS isolating voltage with non-toxic substrate High surge capability High voltage ratings up to 2500V

Contextual Info: International g»g] R e c tifie r Pow er M odules D io d e /D io d e •F AV @ Tc Part Number VRRM (3) (4) (5) (V) IRKD166-04 IRKD166-06 I RKD 166-08 IRKD166-10 1RKD166-12 IRKD166-14 IRKD166-16 IRKD166-18 I RKD 166-20 IRKC166-04 IRKC166-06 IRKC166-08 IRKC166-10

E.78996

Abstract: E 78996 E78996 F 78996 78996 diode ir e.78996
Contextual Info: International ^R ectifier Power Modules Diode/Diode, Fast *F AV @ TC Part Number V r HM (6) (7) (8) (V) IRKDL132-04S10 IRKDL132-06S10 IRKDL132-08S10 IRKDL132-10S10 IRKDL132-06S20 IRKDL132-08S20 IRKDL132-10S20 IRKDL132-12S20 IRKDL132-14S20 IRKDL240-02S10 IRKDL240-04S10

IRKD600

Abstract: KD600
Contextual Info: Bulletin I27402 rev. B 09/06 IRKD600. SERIES SUPER MAGN-A-pakTM Power Modules STANDARD DIODES Features High current capability 3000 VRMS isolating voltage with non-toxic substrate 600 A High surge capability High voltage ratings up to 2000V Industrial standard package

40HF

Contextual Info: Bulletin I27269 rev. A 12/06 IRKDS203/100P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS203. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical