IRGC Search Results

IRGC25B120KB

Abstract: 1kA IGBT
Contextual Info: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

IRGC4066

Abstract: IRGP4066 IRGP4066-E
Contextual Info: PD - 97632 IRGC4066B Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • Short Circuit Rated • Square RBSOA • Positive VCE (on) Temperature Coefficient • Tight Parameter Distribution

IRGC100B120KB

Abstract: 4kA IGBT
Contextual Info: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

igbt 20A 1200v

Abstract: IRGCH20SE IRGPH20S
Contextual Info: PD-9.1440 TARGET IRGCH20SE IRGCH20SE IGBT Die in Wafer Form C 1200 V Size 2 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGBC30F

Abstract: IRGCC30FE
Contextual Info: PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGPH50K

Abstract: igbt 20A 1200v IRGCH50KE
Contextual Info: PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

300C

Abstract: IRGC8B120UB
Contextual Info: PD -94317 IRGC8B120UB IRGC8B120UB IGBT Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology UltraFast 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient 1200 V IC(nom) = 8A VCE(on) typ. = 3.63V @

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

IRGCH50FE

Abstract: IRGPH50F
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1421 TARGET IRGCH50FE IRGCH50FE IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

igbt 20A 1200v

Abstract: IRGCH40SE IRGPH40S 1200v 20a IGBT
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1442 TARGET IRGCH40SE IRGCH40SE IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRGCH40KE

Abstract: IRGPH40K
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1422 TARGET IRGCH40KE IRGCH40KE IGBT Die in Wafer Form C 1200 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Contextual Info: PD - 96295 IRGC2B60KB Die in Wafer Form Features • • • • • C Non Punch Through NPT Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient G Benefits • • • • E Benchmark Efficiency for Motor Control Applications

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGC25B120UB

Abstract: 1kA IGBT IGBT Transistor 1200V, 25A induction welding
Contextual Info: PD - 93867 IRGC25B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =25A VCE(on) typ.=3.37V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability

IRGCC50ME

Abstract: IRGPC50M
Contextual Info: PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

91428

Abstract: IRGCC40FE IRGPC40F IRGCC40F
Contextual Info: PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGC25B120KB

Abstract: international rectifier 5125
Contextual Info: PD - 93868 IRGC25B120KB In te rn a tio n a l R ectifier Die in Wafer Form Features S • 10ps S hort C ircuit Capability • S quare R B S O A • Positive V C E(on 1200V S c • G E N 5 Non Punch T hrough (NPT) T echn ology • Low V CE(onj Tem perature Coefficient

IRGPS60B120KD

Abstract: IRGC49B120KB
Contextual Info: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

Contextual Info: HF72D120ACE Hexfred Die in Wafer Form Fig.1 - Typical Diode Recovery 100 120 100 -100 80 Voltage -200 60 -300 40 -400 20 -500 -600 Current A Voltage (V) VCC=600V; Rg=5Ω; TJ=125°C; L=200µH; Driver=IRGC100B120KB -20 Current -700 -40 -800 -0.50 0.00 0.50

Contextual Info: PD - 94565 IRGC48B120KB Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient Benefits • • • • 1200V IC(nom)= 50A VCE(on) typ.=2.45V @

SK 5207

Contextual Info: PD - 94562 IRGC16B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

Contextual Info: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V