IRG7SC12FPBF Search Results

IRG7SC12FPBF Datasheets (1)

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International Rectifier

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRG7SC12FPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 24A 69W D2PAK	Original	PDF		10

IRG7SC12FPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient	Original	IRG7SC12FPbF EIA-418.	PDF
IRG7SC12FPBF Abstract: C-150 IRF530S irg7sc12 Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution	Original	IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient

Original

IRG7SC12FPbF EIA-418.

PDF

IRG7SC12FPBF

Abstract: C-150 IRF530S irg7sc12
Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution

Original

IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12

PDF