IRFW740S Search Results

IRFW740S Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFW740S		Fairchild Semiconductor	N-CHANNEL POWER MOSFET	Original	PDF	242.63KB	7
IRFW740S		Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	156.17KB	6
IRFW740S		Fairchild Semiconductor	Advance Power MOSFET	Scan	PDF	156.17KB	6

IRFW740S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFW740S A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K	OCR Scan	IRFW740S	PDF
IRFW740S Abstract: 911 DIODE Contextual Info: IRFW740S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K	OCR Scan	IRFW740S IRFW740S 911 DIODE	PDF
c125 diode Contextual Info: IRFW740S A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	IRFW740S c125 diode	PDF
IRFW740S Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW740S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	IRFW740S IRFW740S	PDF
IRFW740S Contextual Info: IRFW740S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K	OCR Scan	IRFW740S IRFW740S	PDF