IRFW710S Search Results

IRFW710S Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFW710S		Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	153.39KB	6
IRFW710S		Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	153.39KB	6

IRFW710S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFW710S Contextual Info: IRFW710S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 3 .6 Î2 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	IRFW710S IRFW710S	PDF
Contextual Info: IRFW710S A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	IRFW710S	PDF
IRFW710S Contextual Info: IRFW710S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 3 .6 Î2 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	IRFW710S IRFW710S	PDF
IRFW710S Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW710S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	IRFW710S IRFW710S	PDF
Contextual Info: IRFW710S A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFW710S	PDF