IRFU120 Search Results

ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFR120 siliconix

Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

tt 93 n 08

Contextual Info: PD - 9.1365A HEXFET Power MOSFET • • • • • Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

IRFU120Z

Abstract: IRFR120Z
Contextual Info: PD - 95772A IRFR120ZPbF IRFU120ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 94754 IRFR120Z IRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 190mΩ

IRFU120

Abstract: U120
Contextual Info: PD - 95067A IRFR/U120NPbF • Lead-Free 1 IRFR/U120NPbF 2 IRFR/U120NPbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H ASS EMB LY LOT CODE 5678 AS SEMBLED ON WW 19, 1999

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION

Contextual Info: IRFR120/121 IRFU120/121 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V RDS on = 190mΩ

Contextual Info: PD - 91365B IRFR/U120N HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G Description The D-PAK is designed for surface mounting using

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF

AN-1005

Contextual Info: PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V RDS on = 190mΩ

IRFZ44N APPLICATION NOTE

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

IRFU120

Abstract: TO-251AA Package TO-251AA U120
Contextual Info: PD - 95015A IRFR9024NPbF IRFU9024NPbF • Lead-Free 1 IRFR/U9024NPbF 2 IRFR/U9024NPbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H ASS EMBLY LOT CODE 5678

AN-994

Abstract: IRF520N IRFR120N IRFU120N
Contextual Info: PD - 9.1365A IRFR/U120N PRELIMINARY HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G ID = 9.3A S Description Fifth Generation HEXFETs from International Rectifier

95523a

Abstract: EIA-541 IRFR120 IRFU120 U120
Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free www.irf.com 1 12/03/04 IRFR/U120PbF 2 www.irf.com IRFR/U120PbF www.irf.com 3 IRFR/U120PbF 4 www.irf.com IRFR/U120PbF www.irf.com 5 IRFR/U120PbF 6 www.irf.com IRFR/U120PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF

Contextual Info: PD- 95523 IRFR120PbF IRFU120PbF • Lead-Free www.irf.com 1 07/08/04 IRFR/U120PbF 2 www.irf.com IRFR/U120PbF www.irf.com 3 IRFR/U120PbF 4 www.irf.com IRFR/U120PbF www.irf.com 5 IRFR/U120PbF 6 www.irf.com IRFR/U120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRFR120

Abstract: SiHFR120 IRFU120 SiHFR120-E3 IRFU120 vishay
Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 16 • Surface Mount (IRFR120/SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120/SiHFU120)

IRFZ44N APPLICATION NOTE

Abstract: for irfz44n
Contextual Info: PD - 91318B International IÖR Rectifier IRFR/U1205 HEXFET Power MOSFET • Ultra Low On-Resistance • Surface Mount IRFR1205 • Straight Lead (IRFU1205) • Fast Switching • Fully Avalanche Rated V dss = 55V ^D S(on) = 0 0 2 7 Q. |D = 44A Description

IRFR120Z

Abstract: IRFU120Z
Contextual Info: PD - 95772A IRFR120ZPbF IRFU120ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

IRFR120Z

Abstract: IRFU120Z
Contextual Info: PD - 94754 IRFR120Z IRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 190mΩ