IRFR 320 Search Results

Contextual Info: IRFR/U9310PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

AN-994

Abstract: IRFR120 IRFR1205 IRFU120 IRFU1205 IRFR 320 IRFU 310
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1318 IRFR/U1205 HEXFET Power MOSFET VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated

AN-994

Abstract: IRFR120 IRFR1205 IRFU120 IRFU1205
Contextual Info: PRELIMINARY DATASHEET PD - 9.1318 IRFR/U1205 HEXFET Power MOSFET VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.027Ω ID = 37A Description

400v 50A DIODE

Abstract: IRFU120
Contextual Info: IRFR/U430APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

Contextual Info: PD - 9.1318A International IQ R Rectifier IRFR/U1205 HEXFET Power M O SFET Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V RDS(on) = 0.027Q lD = 42A

VM-50V

Contextual Info: IRFR/U320A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |JA Max. @ VOS= 400V

S250N

Contextual Info: IRFR/Ü310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 }JA M ax. @ VOS= 400V ■ Low R ^ on) : 2.815 £2 (Typ.)

Contextual Info: IRFR/U330A Advanced Power MOSFET FEATURES 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower ROS(ON) . 0.765 12 (Typ.)

Contextual Info: IRFR/U320A A d van ced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VOS = 400V

Contextual Info: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier

IRFR9310

Abstract: IRFU9310
Contextual Info: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U330A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: IRFR/U310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B ^ dss - 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ V,*, = 400V

Contextual Info: IRFR/U310A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 -7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K

IRFZ44N APPLICATION NOTE

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

IRFZ44N

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

IBJT VDS 400V

Abstract: IBJT IBJT VDS 400V, 10A 2a 400v mosfet irfr 20
Contextual Info: IRFR/U310A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 3 .6 Î2 1.7 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

Contextual Info: IRFR/U310A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 3.6 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 1.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U320A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U310A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 1.7 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: IRFR/U320A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I - 8 ^ 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

Contextual Info: IRFR/U310A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 400 V ^ D S o n = 3 . 6 £2 1 -7 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |^A (Max.) @ V DS = 400V

Fet irfz44n

Contextual Info: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description