IRFR 210 Search Results

Contextual Info: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

diode AE 81A

Abstract: RJ 66a irfr 146 AE 81A RJ 81A DIODE rj 81a
Contextual Info: IRFR/U234A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VDS= 250V

mosfet kt 208

Abstract: S47A
Contextual Info: IRFR/U110A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b vdss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ V^ = 100V

Contextual Info: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

IRFR110A

Contextual Info: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

IRFZ44N APPLICATION NOTE

Abstract: for irfz44n
Contextual Info: PD - 91318B International IÖR Rectifier IRFR/U1205 HEXFET Power MOSFET • Ultra Low On-Resistance • Surface Mount IRFR1205 • Straight Lead (IRFU1205) • Fast Switching • Fully Avalanche Rated V dss = 55V ^D S(on) = 0 0 2 7 Q. |D = 44A Description

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A

LF33

Abstract: IRT 1250
Contextual Info: IRFR/Ü210A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 n A Max. @ VDS= 200V Low Rdsjon) ■ 1.250 (Typ.)

lr66a

Abstract: 0VJG LF81A LF81
Contextual Info: IRFR/U234A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss » 250 V Avatanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ Lower Rosjonj : 0.327 Q. (Typ.)

IRFZ44N APPLICATION NOTE

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRFR/U024A A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V

IRFZ44N

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRFR/U024A A dvanced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^ D S o n - ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 60V

ED 81a

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U234A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 6.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U024A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.07Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 15 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V

Contextual Info: IRFR/U234A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K

Fet irfz44n

Contextual Info: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description

Contextual Info: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS - 200 V Rugged Gate Oxide Technology ^ D S o n = 1.5 Q. • Lower Input Capacitance ■ Improved Gate Charge lD = 2.7 A ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V

irfr 210

Contextual Info: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS - 200 V Rugged Gate Oxide Technology ^ D S o n = 1.5 Q. • Lower Input Capacitance ■ Improved Gate Charge lD = 2.7 A ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V

Contextual Info: IRFR/U234A A dvanced Power MOSEET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0 . 4 5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V ■ Lower RDS(ON) : 0.327 £1 (Typ.) CD Rugged Gate Oxide Technology

Contextual Info: IRFR/U234A Advanced Power MOSFET FEATURES B V dss = 250 V ^DS on = 0 .4 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 6 .6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V

Contextual Info: IRFR/U1205 D -P A K T O -252 A A l l l l l I-P A K T O -25 1A A Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Contextual Info: IRFR/U 234A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0 -4 5 ÌÌ ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology 6.6 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V