IRFP250 APPLICATIONS Search Results

TA9295

Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
Contextual Info: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP250

Abstract: irfp250 applications
Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP250

Abstract: irfp250 applications irfp250 mosfet NOR gate
Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 • ■ ■ ■ ■ VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP250

Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253
Contextual Info: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

irfp250

Abstract: 443D irfp250 mosfet
Contextual Info: PD-9.443D International S Rectifier IRFP250 HEXFET Power M OSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -0 8 5 Q

transistor IRFP250

Contextual Info: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irfp250 applications pulse transformer

Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP250 application

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFP250

Abstract: irfp250 applications IRFP250PBF
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

irfp250m

Abstract: IRFP250 m IRFP250 international rectifier IRFP250 MOSFET IRFp250 TYN 30A TEA+1511
Contextual Info: ?“R Rectifier IRFP250 HEXFET Power M O S FE T • • • • • • I N T E R NA T I O NA L RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss bSE

Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient

IRFP250

Abstract: d881 transistor IRFP250 D88FN2
Contextual Info: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: Preliminary Data Sheet PD-20035 rev. A 03/01 30CPH03 Ultrafast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 300V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications

Contextual Info: Bulletin PD-20035 rev. B 04/01 30CPH03 Ultrafast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 300V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized

Contextual Info: Bulletin PD-20770 rev. B 10/06 30CTH03 Hyperfast Rectifier Features • • • • trr = 36ns max. IF AV = 30Amp VR = 300V Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications

30EPH03

Abstract: IRFP250 P035H
Contextual Info: Bulletin PD-20882 11/04 30EPH03PbF Ultrafast Rectifier Features • • • • • trr = 55ns IF AV = 30Amp VR = 300V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Lead-Free ("PbF" suffix) Description/ Applications

b0401

Contextual Info: Bulletin PD-20059 rev. B 04/01 30EPH03 Ultrafast Rectifier Features • • • • trr = 55ns IF AV = 30Amp VR = 300V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized

30CPU04

Abstract: fast recovery 30amp IRFP250 ULTRA fast rectifier diode 30A 200V anode common
Contextual Info: Bulletin PD-20750 rev. B 11/01 30CPU04 Ultrafast Rectifier Features • • • • trr = 60ns IF AV = 30Amp VR = 400V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications International Rectifier's FRED. series are the state of the art Ultra fast recovery rectifiers specifically designed with

Contextual Info: Bulletin PD-21113 04/06 HFA240NJ40CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

MUR 2030

Abstract: mur3020 fast recovery 30amp MUR3020WTPbF p035h IRFP250 MUR3020WT IRFP250 international rectifier
Contextual Info: Bulletin PD-20883 11/04 MUR3020WTPbF Ultrafast Rectifier Features • • • • • t rr = 35ns IF AV = 30Amp VR = 200V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Lead-Free ("PbF" suffix) Description/ Applications

8A350

Abstract: 8ETU04 8ETU04S IRFP250 8ETU04-1
Contextual Info: Bulletin PD-20751 01/01 8ETU04 8ETU04S 8ETU04-1 Ultrafast Rectifier Features • • • • trr = 60ns IF AV = 8Amp VR = 400V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications

1412D

Abstract: 035H 30CPH03 IRFP250 d0403
Contextual Info: Bulletin PD-20035 rev. D 04/03 30CPH03 Ultrafast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 300V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Description/ Applications International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized

Contextual Info: Bulletin PD-21114 04/06 HFA140NJ60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 Features • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications