IRFP250 APPLICATION NOTE Search Results

transistor IRFP250

Contextual Info: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP250 application

Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
Contextual Info: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP250 application

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

irfp250 application note

Abstract: irfp250 DRIVER
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the

irfp250 applications pulse transformer

Abstract: irfp250 DRIVER irfp250 IRFP250 application irfp250 applications MOSFET IRFp250
Contextual Info: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IEC571

Abstract: RIA12 EN50155 336V IRFD110 application IRFP450 dc to dc converter from 110V to 24V RAILWAY FIXED EQUIPMENT 110VN IRFP450 Power Mosfet
Contextual Info: Application Note Using Modular DC-DC Converters to Meet European Standards for Railway Applications In Europe, the performance of electrical and electronic equipment in railway applications is governed by two international standards. Electrical Requirements

Contextual Info: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic

ULTRAFAST SOFT RECOVERY DUAL DIODES module

Abstract: IRFP250 UFB200FA20 fast diode SOT-227
Contextual Info: Preliminary Data Sheet PD-20491 02/01 UFB200FA20 Ultrafast Soft Recovery Diode VR = 200V Features • • • • VF typ. = 0.92V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly

ULTRAFAST SOFT RECOVERY DUAL DIODES module

Abstract: IRFP250 UFB200FA20
Contextual Info: Preliminary Data Sheet PD-20491 rev. A 04/01 UFB200FA20 Ultrafast Soft Recovery Diode Features • • • • VR = 200V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly

VISHAY DiodE 400

Contextual Info: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI

Contextual Info: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI

Contextual Info: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI

diode 400

Abstract: VSUD400CW60 irfp250 applications hf 600 welding wire IRFP250 VISHAY DiodE 400
Contextual Info: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI

irf 1740

Abstract: TAC 227 ULTRAFAST SOFT RECOVERY DUAL DIODES module welder inverter 160 dc IRFP250 UFB200FA40
Contextual Info: Preliminary Data Sheet PD-20486 02/01 UFB200FA40 Ultrafast Soft Recovery Diode VR = 400V Features • • • • VF typ. = 1.0V Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly

HFA120FA60

Abstract: IRFP250
Contextual Info: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features • • • • Fast Recovery time characteristic

80EBU02

Abstract: IRFP250
Contextual Info: 80EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode • Designed and qualified for industrial level

93002

Abstract: 150EBU02 IRFP250
Contextual Info: 150EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode Anode • Designed and qualified for industrial level

Contextual Info: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

ULTRAFAST SOFT RECOVERY DUAL DIODES module

Abstract: HFA120FA120P IRFP250
Contextual Info: HFA120FA120P Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES 1 • Fast recovery time characteristic 4 • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

ULTRAFAST SOFT RECOVERY DUAL DIODES module

Abstract: HFA120FA120P IRFP250
Contextual Info: HFA120FA120P Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES 1 • Fast recovery time characteristic 4 • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

VISHAY DiodE 400

Contextual Info: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI