IRFHM792TR2PBF Search Results
IRFHM792TR2PBF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IRFHM792TR2PBF | International Rectifier | FETs - Arrays, Discrete Semiconductor Products, MOSFET N CH DUAL 100V 2.3A 8PQFN | Original | 9 |
IRFHM792TR2PBF Price and Stock
Infineon Technologies AG IRFHM792TR2PBFMOSFET 2N-CH 100V 2.3A 8PQFN |
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IRFHM792TR2PBF | Cut Tape | 1 |
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International Rectifier IRFHM792TR2PBFHEXFET POWER MOSFET Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFHM792TR2PBF | 550 |
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IRFHM792TR2PBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFHM792TRPBF
Abstract: IRFHM792
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Original |
6368A IRFHM792TRPbF IRFHM792TR2PbF IRFHM792TR2PBF IRFHM792 | |
Contextual Info: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications |
Original |
6368A IRFHM792TRPbF IRFHM792TR2PbF | |
Contextual Info: IRFHM792PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 8 D 7 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications • DC-DC Primary Switch |
Original |
IRFHM792PbF IRFHM792TRPBÎ |