IRFH7110TR2PBF Search Results
IRFH7110TR2PBF Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFH7110TR2PBF | International Rectifier | FETs - Single, Discrete Semiconductor Products, MOSFET N CH 100V 11A PQFN5X6 | Original | 9 |
IRFH7110TR2PBF Price and Stock
Infineon Technologies AG IRFH7110TR2PBFMOSFET N CH 100V 11A PQFN5X6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFH7110TR2PBF | Digi-Reel | 1 |
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International Rectifier IRFH7110TR2PBFHEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFH7110TR2PBF | 1,600 |
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IRFH7110TR2PBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PD -97789 IRFH7110PbF HEXFET Power MOSFET VDS Vgs max RDS on max (@VGS = 10V) QG (typical) RG (typical) ID 100 ± 20 V V 13.5 m 58 0.6 nC 50 (@Tc(Bottom) = 25°C) i PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification Inverters for DC Motors |
Original |
IRFH7110PbF 174mH, | |
IRFH7110Contextual Info: PD -97789 IRFH7110PbF HEXFET Power MOSFET VDS Vgs max RDS on max (@VGS = 10V) QG (typical) RG (typical) ID 100 ± 20 V V 13.5 m 58 0.6 nC 50 (@Tc(Bottom) = 25°C) i PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification Inverters for DC Motors |
Original |
IRFH7110PbF 174mH, IRFH7110 | |
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Contextual Info: IRFH7110PbF HEXFET Power MOSFET VDS Vgs max RDS on max (@VGS = 10V) QG (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 ± 20 V V 13.5 mΩ 58 0.6 nC 50 Ω i PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors |
Original |
IRFH7110PbF IRFH7110TRPBF IRFH7110TR2PBF |