IRFC11N50AB Search Results

IRFC11N50AB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFC11N50 Abstract: IRFB11N50A equivalent Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω	Original	IRFC11N50AB 12-Mar-07 IRFC11N50 IRFB11N50A equivalent	PDF
Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω	Original	IRFC11N50AB	PDF

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IRFC11N50

Abstract: IRFB11N50A equivalent
Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω

Original

IRFC11N50AB 12-Mar-07 IRFC11N50 IRFB11N50A equivalent

PDF

Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω

Original

IRFC11N50AB

PDF