IRFBC30 150 E Search Results

IRFBC30

Abstract: IRFBC30 150 E 4315A
Contextual Info: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 4.3 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

IRFBC32

Contextual Info: HE D I 4Û5S4SE □□Oôfc.42 □ | Data Sheet No. PD-9.482B INTERNATIONAL RECTIFIER _ IN T E R N A T IO N A L R E C T IF IE R [ l O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRFBC30 IRFBC32 HEXFET TRANSISTORS N -C H A N N E L 600 Volt, 2.2 Ohm HEXFET

IRFBC30

Contextual Info: IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ΙΙ MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: IRFBC30  N - CHANNEL 600V - 1.8 Ω - 3.6 A - TO-220 PowerMESH MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Contextual Info: IRFBC30  N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ΙΙ MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Abstract: IRFBC30I 442 rectifier
Contextual Info: International HEl Rectifier I IRFBC30 I NTERNATIONAL HEXFET Power MOSFET • • • • • PD-9.482C 4Ô S 54 S 2 G 0 m T 5 b ÔDfi H I N R RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

IRFBC30

Abstract: DC/AC to DC smps circuit diagram static charge meter powermesh mosfet
Contextual Info: IRFBC30 N - CHANNEL 600V -1.8 Í2 - 3.6A - TO-220 PowerMESH II MOSFET TYPE V IR F B C 3 0 • . . . . d s s 600 V R d < S o 2 .2 Id ii Q. 3.6 A TYPICAL R D S (o n ) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

482C

Abstract: IRFBC30 660 tg diode J3E diode
Contextual Info: PD-9.482C International [TOR!Rectifier IRFBC30 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 0 V R DS on = 2 -2 ^ lD = 3 .6 A Description

Contextual Info: SGS-THOMSON ;^ O T @ re s IR F B C 30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 Voss R D S o n Id 600 V 2.2 Q 4.3 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED

Contextual Info: PD-9.482C International [TOR!Rectifier IRFBC30 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 0 V R DS on = 2 -2 ^ lD = 3 .6 A Description

diode 251 36A

Abstract: IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v
Contextual Info: PD-9.482C International irêRl Rectifier IRFBC30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V R DS on - 2 -2 ß lD = 3.6A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r p rovid e th e d e sig n e r

IRFBC30

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBC30

Abstract: irfbc30 vishay
Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

22AB

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRF744

Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Contextual Info: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous

IR2106 APPLICATION NOTE

Abstract: IR2106S DT97-3 IRFBC20 IR21064S CC15V ir2106s datasheet IRFBC30 IRFPE50 IR2106
Contextual Info: Data Sheet No. PD60162-U IR2106 4 (S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)

IR2106 APPLICATION NOTE

Abstract: ir2106pbf ir2106s datasheet IRFBC30 IR2106 IR21064 IR21064S IR2106S IRFBC20 IRFBC40
Contextual Info: Data Sheet No. PD60162 Rev. W IR2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune