IRF530N APPLICATIONS Search Results

IRF530N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description

Contextual Info: Internationa! P D - 9.1351 SRectifier IRF530N PRELIMINARY H EXFET Pow er M O S FE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V o s s = 100V R DS on = 0 . 1 1 Q

IRF530N

Abstract: IRF530N applications
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ

IRF530N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

IRF530N

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International

R54 Transistor

Abstract: R52 transistor DPA424P J22 transistor IRF530N applications VC51 DI-70 TRANSISTOR R52 in4148 zener diode zener diode c25
Contextual Info: Design Idea DI-70 DPA-Switch Power Over Ethernet Interface Circuit and DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 15 W 36-75 VDC 5 V / 7.5 V / 20 V Forward Design Highlights The second “Classification” phase occurs at input voltages

DI-70

Abstract: TRANSISTOR R52 C22-C24 BAV19WS D101 DI-69 DL4002 DPA424P "Power over Ethernet" VR51
Contextual Info: Design Idea DI-70 DPA-Switch PoE Detection and Classification Class 0 Interface Circuit Application Device Power Output Input Voltage Output Voltage Topology PoE/VoIP DPA424P 12.94 W 34-57 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • • •

IRF530N

Abstract: IRFI530N IRFI840G
Contextual Info: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description

IRF530NS

Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

Contextual Info: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating

Contextual Info: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description

IRF530N

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
Contextual Info: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description

Contextual Info: PD - 9.1353A International I R Rectifier IRFI530N PRELIMINARY HEXFEr Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d ss = 1 00 V

AN-994

Abstract: IRF530N IRFR120 IRFR3910 IRFU3910 irfr 120 001T
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1364 IRFR/U3910 PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount IRFR3910 Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.11Ω

eo102

Abstract: 9245d
Contextual Info: PD - 9.1353A Interna tional IS R Rectifier IRFI530N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Vdss = 100 V

IRF530N applications

Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ

AN-994

Abstract: IRF530N IRF530NL IRL3103L
Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ

IRF530N

Abstract: IRFI530N 4.5v to 100v input regulator
Contextual Info: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A

IRFU39

Abstract: marking vap te051
Contextual Info: PD - 9.1364A International IS R Rectifier IRFR/U3910 PRELIMINARY HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR3910 Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = 100 V

Contextual Info: PD - 91364B International IQ R Rectifier IRFR/U3910 HEXFET Power MOSFET • • • • • • Ultra Low O n-R esistance Surface M ount IRFR3910 Straight Lead (IRFU3910) A dvanced Process Technology Fast Switching Fully Avalanche Rated V dss = 100V R ü S (o n ) = 0 .1 1 5Q .

TP2350B

Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS

Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì

AN-994

Abstract: IRF530N IRFR3910 IRFU3910
Contextual Info: PD - 91364B IRFR/U3910 HEXFET Power MOSFET Ultra Low On-Resistance l Surface Mount IRFR3910 l Straight Lead (IRFU3910) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.115Ω G ID = 16A S Fifth Generation HEXFETs from International Rectifier