AN569
Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
|
Original
|
IRF530/D
IRF530
AN569
IRF530
|
PDF
|
IRF530
Abstract: IRF530FI
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF530 IRF530FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 10 A TYPICAL RDS(on) = 0.095 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
IRF530
IRF530FI
100oC
175oC
O-220
ISOWATT220
IRF530
IRF530FI
|
PDF
|
IRF530
Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
|
Original
|
O-220
IRF530
O-220
IRF530
tr irf530
|
PDF
|
AN569
Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
|
Original
|
IRF530/D
IRF530
AN569
IRF530
|
PDF
|
irf530
Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
|
Original
|
IRF530
O-220
irf530
IRF530 mosfet
datasheet of irf530
IRF530 marking
OF IRF530
tr irf530
irf530 circuit
airbag
|
PDF
|
IRF530
Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE
|
Original
|
IRF530
O-220
IRF530
tr irf530
|
PDF
|
MAX1664
Abstract: irf530 IRF530 application
Contextual Info: IRF530 N-CHANNEL 100V - 0.12Ω - 16A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE IRF530 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.12Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE
|
Original
|
O-220
IRF530
O-220
MAX1664
irf530
IRF530 application
|
PDF
|
DM 321
Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Contextual Info: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
|
Original
|
IRF530
IRF530,
RF1S530SM
DM 321
IRF530 mosfet
TA17411
RF1S540SM9A
IRF530 data sheet in
IRF530 datasheet
N-Channel Switch intersil
relay 6v 100 ohm
tr irf530
|
PDF
|
IRF530
Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
IRF530
IRF530FI
IRF530F
100oC
175oC
O-220
O-220FI
IRF530
transistor irf530
IRF530FI
IRF530 application
O-220F
transistor irf 130
O220F
tr irf530
|
PDF
|
IRF530
Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
IRF530
IRF530FI
IRF530F
100oC
175oC
O-220
ISOWATT220
IRF530
IRF530 IRF530FI
DATA SHEET OF IRF530
IRF530FI equivalent
IRF530FI
transistor irf530
tr irf530
|
PDF
|
BU271
Abstract: IRF540 24334 FSN0920
Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A
|
OCR Scan
|
O-220
O-257
O-254
O-258
BU271
IRF540
24334
FSN0920
|
PDF
|
irf530
Abstract: 929E-10 IRF530 fairchild
Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
|
Original
|
IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
|
PDF
|
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
|
Original
|
BUZ10
BUZ11
BUZ11A
BUZ71
BUZ71A
BUZ72A
BUZ80A
IRF520
IRF530
IRF540
SSH6N80
rfp60n06
IRF3205 IR
BUK417-500AE
SFP70N03
BUZ91A
2SK2717
STMicroelectronics
BUZ22
IXFH13N50
|
PDF
|
RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
|
Original
|
IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
|
PDF
|
|
|
IRF530 mosfet
Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power
|
Original
|
IRF53
O220AB
O263AB
IRF530
IRF530 mosfet
TA17411
IRF530
TB334
irf530g
|
PDF
|
IRF530 marking
Abstract: irf530
Contextual Info: 4Ô55M52 DOlMbSb DbS International Rectifier 11NR PD-9.3070 IRF530 HEXFET Power M O S F E T bSE T> INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
55M52
IRF530
OG14bbl
IRF530 marking
irf530
|
PDF
|
2N4351 MOTOROLA
Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132
|
Original
|
2SK355
IRF241
2SK357
BUZ30
BUZ43A
IRF623
2SK358
BUZ60
2SK382
2N4351 MOTOROLA
MRF966
3SK124
2N3819 MOTOROLA
BFS28
3SK45
BSV81
2N4221 motorola
BC547 MOTOROLA
3SK76
|
PDF
|
RF530
Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS
|
OCR Scan
|
T-39-11
IRF530
IRF531
IRF532
IRF533Î
O-220AB
IRF530,
IRF531,
IRF532,
IRF533
RF530
1RF530
IRF530 HEXFET TRANSISTORS
IR IRF532
1RF531
TYN 058
LIRF530
|
PDF
|
irf530
Contextual Info: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
IRF530/531
IRF530
IRF531
Q02fl755
irf530
|
PDF
|
IRF530
Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
|
OCR Scan
|
IRF530,
IRF531,
IRF532,
IRF533,
RF1S530,
RF1S530SM
IRF530
IR IRF532
IRF531
OF IRF530
TA17411
f531
RF1S540
RF1S540SM9A
irf532
rf1s530sm
|
PDF
|
IRF530
Abstract: IRF530 marking
Contextual Info: PD-9.3070 International [I«R ]Rectifier IRF530 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS=100V R DS on = 0 - 1 6 0
|
OCR Scan
|
IRF530
O-220
IRF530
IRF530 marking
|
PDF
|
irf530
Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
Contextual Info: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power
|
OCR Scan
|
IRF130-133/IRF530-533JjlHTÃ
MTP20N08/20N10
IRF130
IRF130-133
IRF530-533
MTP20N08/20N10
PC10021F
IRF130-133/IRF530-533
T-39-11
irf530
tr irf530
20n10
20N08
MTP20N10
MTP20N08
IRF131
IRF132
IRF133
|
PDF
|
transistor irf 647
Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Contextual Info: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,
|
OCR Scan
|
IRF530
IRF531
IRF532
IRFS33
IRF533
transistor irf 647
transistor IRF 531
transistor irf 064
irf 570
p570
|
PDF
|
IRF530
Contextual Info: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
IRF530
O-220
T0-220
IRF530
|
PDF
|
