IRF1010 E Search Results

IRF1010

Abstract: to-22qab XGR719C 1789
Contextual Info: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

irf1010

Abstract: irf1010 applications irf1010 MOSFET L377
Contextual Info: 4Ô55452 0 0 1 4 7 ^ 4 AST International k Rectifier IINR PD-9.814 IRF1010 HEXFET® Power MOSFET INTERNATIONAL R ECTIFIER Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching

Contextual Info: IRF1010 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V) I(D) Max. (A)75# I(DM) Max. (A) Pulsed I(D)53 @Temp (øC)100# IDM Max (@25øC Amb)300# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ

1rf1010

Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
Contextual Info: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

IRF1010

Abstract: TO-220 JEDEC b 0316 marking 221 part marking ab Package outline To220ab JEDEC OUTLINE marking 1145 647 marking
Contextual Info: IRF737LC Package Outline HEXFET TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

irf1010 applications

Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
Contextual Info: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:

IRF1010 E DATASHEET

Abstract: irf1010 irf1010 applications irfz44e
Contextual Info: PD - 9.1671A IRFZ44E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS on = 0.023Ω ID = 48A Description Fifth Generation HEXFETs from International Rectifier

IRF1010

Abstract: IRL630
Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description

IRF9530N

Contextual Info: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

irf1010

Abstract: marking 221
Contextual Info: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

FL014

Abstract: FL014 Example International Rectifier TO-261AA IRFL014 international rectifier code sot223 YEAR DATE CODE IRF1010 IRFS1Z0 314 sot-89 INTERNATIONAL RECTIFIER
Contextual Info: SOT-89 EXAMPLE: THIS IS AN IRFS1Z0 THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE PART NUMBER. BOTH SETS OF CHARACTERS FACING OUTWARD INDICATE THAT THE SOT-89 IS A HEXFET. THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE DATE CODE. SOT-223 TO-261AA

IRF1010 E DATASHEET

Abstract: IRF1404 IRF1010 TO-220AB Package Package outline To220ab
Contextual Info: IRF1404 TO-220AB Package Outline Dimensions are shown in millimeters 10.54 .415 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045)

IRF34N

Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Contextual Info: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss

IRF9540N

Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω

Contextual Info: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

9BB.

Contextual Info: PD 9.1623 International IOR Rectifier IRF3315 PRELIMINARY H EXFET Power M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating t75°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs = 150V ^ DS on = Description

IRF8010

Abstract: IRF1010 AN1001
Contextual Info: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF8010 equivalent

Abstract: mosfet 4,5a 023 12v IRF8010 AN1001 IRF1010
Contextual Info: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF1010

Contextual Info: IRF737LC Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600)

IRF5210

Abstract: irf1010 applications IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

IRF5210

Contextual Info: PD 9.1434 International » » R e ctifie r IR F 5 2 1 0 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Ultra Low On-Resistancc • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

IRF1010

Abstract: IRL630
Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V