IRF1010 E Search Results

IRF1010

Abstract: to-22qab XGR719C 1789
Contextual Info: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

irf1010 applications

Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
Contextual Info: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:

IRF1010

Abstract: IRL630
Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description

IRF9530N

Contextual Info: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

FL014

Abstract: FL014 Example International Rectifier TO-261AA IRFL014 international rectifier code sot223 YEAR DATE CODE IRF1010 IRFS1Z0 314 sot-89 INTERNATIONAL RECTIFIER
Contextual Info: SOT-89 EXAMPLE: THIS IS AN IRFS1Z0 THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE PART NUMBER. BOTH SETS OF CHARACTERS FACING OUTWARD INDICATE THAT THE SOT-89 IS A HEXFET. THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE DATE CODE. SOT-223 TO-261AA

IRF9540N

Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω

IRF4905

Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω

9BB.

Contextual Info: PD 9.1623 International IOR Rectifier IRF3315 PRELIMINARY H EXFET Power M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating t75°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs = 150V ^ DS on = Description

IRF8010

Abstract: IRF1010 AN1001
Contextual Info: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF5210

Abstract: irf1010 applications IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

IRF5210

Contextual Info: PD 9.1434 International » » R e ctifie r IR F 5 2 1 0 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Ultra Low On-Resistancc • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

IRF1010

Abstract: IRL630
Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V

Contextual Info: PD 9.1437 International lö R Rectifier IRF9540N PRELIMINARY H E X F E T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V DSS = - 1 0 0 V

Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

IRF2204

Abstract: IRF220
Contextual Info: PD - 94434 AUTOMOTIVE MOSFET IRF2204 HEXFET Power MOSFET Typical Applications ● ● Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

IRL3803

Abstract: 20S1 IRF1010 XSR9246
Contextual Info: PD - 9.1301C International l R Rectifier IRL3803 HEXFET Power MOSFET • • • • • • • Logic-Level G ate Drive A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 ° C O perating Tem perature Fast Switching Fully Avalanche Rated

IRF1503

Abstract: irf150
Contextual Info: PD-94526A IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

irf 210a

Abstract: IRF2204
Contextual Info: PD - 94434 AUTOMOTIVE MOSFET IRF2204 HEXFET Power MOSFET Typical Applications ● ● Electric Power Steering 14 Volts Automotive Electrical Systems D VDSS = 40V Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: P D -91494A International IOR Rectifier IRL520N H EXFET Pow er M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R DS on = 0.1 8£2

Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRFB 630

Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See