IRF F7101 Search Results

irf f7101

Abstract: F7101 irf 480 EIA-541
Contextual Info: IRF7468PbF SO-8 Package Outline Dimensions are shown in millimeters inches D DIM B 5 A 8 7 6 5 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574

irf 1340

Abstract: 95266 HEXFET SO-8 transistor IRF 7101 EIA-541 F7101
Contextual Info: PD - 95266 IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN1001

Abstract: EIA-541 F7101 3.7v transformer irf f7101
Contextual Info: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

irf f7101

Abstract: EIA-541 F7101 TOP 36
Contextual Info: PD - 95344 IRF7468PbF SMPS MOSFET HEXFET Power MOSFET Applications l l l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free l l l Ultra-Low Gate Impedance

Contextual Info: PD - 95344 IRF7468PbF SMPS MOSFET HEXFET Power MOSFET Applications l l l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free l l l Ultra-Low Gate Impedance

Contextual Info: PD - 96101C IRF7103QPbF HEXFET Power MOSFET Benefits l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package

IRF7309

Abstract: IRF7319 IRF7509 f7101 irf MOSFET p-CH IRF9952PBF 13A16
Contextual Info: PD - 95135 IRF9952PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2

Contextual Info: PD - 95135 IRF9952PbF HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 N-Ch P-Ch