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    IRF (10A) 55V P Search Results

    IRF (10A) 55V P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8638PPS1006LF
    		Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Pin Solder Bucket 10A, >500 Cycles PDF
    8638PSC1005LF
    		Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Socket Crimp 10A, >200 Cycles PDF
    8638PSC1006LF
    		Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Socket Crimp 10A, >500 Cycles PDF
    8638PSS1006LF
    		Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Socket Solder Bucket 10A, >500 Cycles PDF
    8638PPC1006LF
    		Amphenol Communications Solutions D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Pin Crimp 10A, >500 Cycles PDF

    IRF (10A) 55V P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet PDF

    Contextual Info: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description


    Original     		IRLR/U014NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481. PDF

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480 PDF

    IRFR5305

    Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


    Original     		PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) O-252AA) EIA-481 EIA-541. EIA-481. IRFR5305 IRFR P-Channel MOSFET IRFU5305PbF IRFU5305 PDF

    IRFR5305

    Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
    Contextual Info: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A


    Original     		PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) moun16 EIA-481 EIA-541. EIA-481. IRFR5305 IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF PDF

    IRF (10A) 55V

    Abstract: AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10
    Contextual Info: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V


    Original     		5062A IRLR2705) IRLU2705) IRLR2705PbF IRLU2705PbF O-252A O-252AA) EIA-481 EIA-541. EIA-481. IRF (10A) 55V AN-994 IRFU120 IRLR2705 IRLU2705 IRLZ34N R120 U120 3F10 PDF

    mosfet IRFZ34N

    Abstract: U120 AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120
    Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) O-252AA) EIA-481 EIA-541. EIA-481. mosfet IRFZ34N U120 AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 PDF

    IRF (10A) 55V

    Abstract: IRLR2705 AN-994 IRFU120 IRLU2705 IRLZ34N R120 U120 IRF Power MOSFET code marking
    Contextual Info: PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2705 Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free IRLR2705PbF IRLU2705PbF HEXFET Power MOSFET D VDSS = 55V


    Original     		5062A IRLR2705) IRLU2705) IRLR2705PbF IRLU2705PbF O-252A16 EIA-481 EIA-541. EIA-481. IRF (10A) 55V IRLR2705 AN-994 IRFU120 IRLU2705 IRLZ34N R120 U120 IRF Power MOSFET code marking PDF

    irf power mosfet

    Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
    Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) EIA-481 EIA-541. EIA-481. irf power mosfet IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3 PDF

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


    Original     		1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N PDF

    Equivalent IRF 44

    Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
    Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


    Original     		1329B IRLIZ34N O-220 Equivalent IRF 44 IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34 PDF

    AN-994

    Abstract: IRFR120 IRFU120 IRLR024N IRLU024N U120 U014
    Contextual Info: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description


    Original     		5551A IRLR/U014NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481. information12/04 AN-994 IRFR120 IRFU120 IRLR024N IRLU024N U120 U014 PDF

    IRLIZ34N

    Abstract: MOSFET IRF 630
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    Original     		IRLIZ34N IRLIZ34N MOSFET IRF 630 PDF

    IRF (10A) 55V

    Abstract: AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF
    Contextual Info: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω


    Original     		5369A IRFR2405PbF IRFU2405PbF IRFR2405) IRFU2405) O-252AA) EIA-481 EIA-541. EIA-481. IRF (10A) 55V AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF PDF

    1530A

    Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
    Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A


    Original     		IRFI9Z34N O-220 1530A IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E PDF

    IRFIZ34N

    Abstract: IRFZ34N MOSFET 150 N IRF
    Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ34N O-220 IRFIZ34N IRFZ34N MOSFET 150 N IRF PDF

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent PDF

    IRFZ34N

    Abstract: irfz34n equivalent irf 405
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 IRFZ34N irfz34n equivalent irf 405 PDF

    irfz34n equivalent

    Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		1276C IRFZ34N O-220 irfz34n equivalent IRFZ34N IRFZ34N MOSFET *rfz34n PDF

    IRF9Z34N

    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.2001 IRF9Z34N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.10Ω


    Original     		IRF9Z34N O-220 IRF9Z34N PDF

    irf 480

    Abstract: 200nC IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120
    Contextual Info: PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A


    Original     		5081A IRLR024NPbF IRLU024NPbF IRLR024N) IRLU024N) EIA-481 EIA-541. EIA-481. irf 480 200nC IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120 PDF

    IRLU024NPBF

    Abstract: IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120
    Contextual Info: PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A


    Original     		5081A IRLR024NPbF IRLU024NPbF IRLR024N) IRLU024N) O-252AA) EIA-481 EIA-541. EIA-481. IRLU024NPBF IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120 PDF

    Contextual Info: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A… S Fifth Generation HEXFETs from International Rectifier


    Original     		IRFR/U4105PbF IRFR4105) IRFU4105) O-252AA) EIA-481 EIA-541. EIA-481. PDF

    IRF9Z34N

    Contextual Info: PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier


    Original     		1485B IRF9Z34N O-220 IRF9Z34N PDF