IRC PW 5 Search Results

Contextual Info: N o v e m b e r 19 9 8 PRELIM IN AR Y ^Ék Micro Linear ML4827 Fault-Protected PFC and PW M Controller Combo GENERAL DESCRIPTION FEATURES The M L 4 8 2 7 is a c o n tro lle r fo r p o w e r fa c to r co rre cte d , s w itc h e d m ode p o w e r supplies, th a t in c lu d e s c irc u itry

AD9283

Contextual Info: ANALOG DEVICES 8-Bit, 50 MSPS/80 MSPS/100 MSPS 3 V A/D Converter AD9283 FEATURES 8-Bit, 50, 80 and 100 MSPS ADC Low Power: 90 m W at 100 MSPS On-Chip Reference and Track/Hold 475 MHz Analog Bandwidth SNR = 46.5 dB @ 41 MHz at 100 MSPS 1 V p-p Analog Input Range

PWM125

Abstract: pwm circuits softstart
Contextual Info: PRELIMINARY a S iliconix PW M 125 R egulating P u lse W idth M odulator FEATURES BENEFITS APPLICATIONS • Fixed 200 ns Deadtime • Reduced Transients • Operational to 500 kHz • High Frequency Operation • Switched-M ode Power Supplies • 8 to 35 V Operation

Contextual Info: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cb O Symbol 50 0 V Collector Emitter Voltage

2SB824

Abstract: 2SD1060 EN6861 2SDI060
Contextual Info: Ordering number: EN6861 I 2SB824/2SD1060 No.6861 PNP/NPN Epitaxial Planar Silicon Transistors SA\YO 50V/5A Switching Applications I A P PLICATIO NS • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching

FRO20

Contextual Info: Sì HARRIS H C -5 5 1 2 / 5 5 1 2 A < CM T— IO IO PCM Monolithic Filter D escription Features The H C -5 5 1 2 /H C -5 5 1 2 A filter is a m onolithic circuit containing both transm it and receive filters specifically designed fo r PCM C O DEC filter ap plication s in 8kH z sam ­

Contextual Info: 1 0 K /1 0 K H ECL Logic Pulse Width Control Modules Electrical Specifications at 25°C Part Number ECLPWG-5 ECLPWG-6 ECLPWG-7 ECLPWG-8 ECLPWG-9 ECLPWG-10 ECLPWG-15 ECLPWG-20 ECLPWG-25 ECLPWG-30 ECLPWG-40 ECLPWG-50 ECLPWG-60 ECLPWG-75 ECLPWG-100 • Triggered by the input's rising edge input pulse

IRC TFS

Abstract: 20epw
Contextual Info: binine F ire p r o o f h ig h te m p e r a tu r e c e ra m ic GENERAL PURPOSE POWER WIREWOUND RESISTOR o i s e - s ta n d o tfs o p tio n a l A llo y r e s i s t a n t PW • • • • - w ire o n fib e rg la s s SERIES s u b s tra te 2 watts to 25 watts

fuji ipm

Abstract: C6003 7MBP100RA060 T151 IGBT .XT
Contextual Info: !•=*?■ ■ V # ■■■■% ' FU JI M U J M S I Ji iG B T 6 0 0 V /1 0 0 A /7 in one-package R series 7MBP100RA060 Features 'J ~ X t IP M -N V OE a±«i FUJI NEW SEMICONDUCTOR PRODUCTS IGBT-IPM u ’IjS S& 14<7> * 5 M 7 - V V 7 “w T j t i f f * 1 1 4 0 3 1 :1

Contextual Info: GENERAL PURPOSE POWER METAL GLAZE RESISTOR PWRG • • • • SERIES* Inorganic fireproof encapsulant 3 and 5 watts 1 ohm to 1MQ ohm range Radial leads for PC mount TC's from 100 ppm/°C resistive element ‘ Manufactured in Barbados SPECIFICATIONS: - Power Rating: 3 and 5 watts

Contextual Info: NOR GATE SP381A Quad 2-Input with Open Collector PIN CONFIGURATION 14 13 12 11 10 9 8 SP381A *O p e n C o lle c to r O u tp u ts ELECTRICAL CHARACTERISTICS Notes 1. 2,3,5 and 7 Standard Conditions: V q q = 5.0V , = Operating Temp. Range (Unless Noted) C H A R A C T E R IS T IC

MAX730ACPA

Contextual Info: ADVANCE INFORMATION yuyjxiyki All information in this data sheet is preliminary and subject to change. 8/93 5V, Step-Down, Current-M ode PW M DC-DC C onverters F e a tu re s ♦ Up to 950mA Load Currents ♦ 160kHz, High-Frequency, Current-Mode PWM ♦ Guaranteed Oscillator Frequency Limits

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC3569 HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector Base Voltage VcBO 500 V Collector Emitter Voltage

Contextual Info: 2SJ247 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

2N6552

Abstract: lta 301
Contextual Info: BIG POWER " BIG IDEAS IN H | • PowerTeen 1SOAMPERES PT-4500 HIGH VOLTAGE SILICON NPIM TRANSISTOR FEATURES V cE sat . 0 .7 5 @ 1 0 0 A V B E . 1.5 @ 1 0 0A h F E .

Contextual Info: Ordering number: E N 2069A 2SB1140 PN P Epitaxial P lanar Silicon Transistor S M IY O i 20V/5A Switching Applications A p p licatio n s • Strobes, power supplies, relay drivers, lamp drivers: F e a tu re s . Adoption of FBET, MBIT processes. . Low saturation voltage.

Contextual Info: 88D GENERAL IN ST R U M ^ iV rr P A C K A G E D IM E N S IO N S l 02941 D T - H I T -8 1 NON-ZERO-CROSSING 5 mA ¡¡¡¿p3023 . . S |~ 7 4 t,fe .a 5 1 NON-ZERO-GROSSING TRIACS AIGaAs ì l D •Optocouplers flfl C2UALITY TEC HNOLOGIE S CORP - . D E S C R IP T IO N

M50957-XXXSPs

Abstract: 50958-XXXSP
Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 5 0 9 5 7 -X X X S P /F P ,M 5 0 9 5 8 -X X X S P /F P preliminary :"»««-*^ M 5 0 9 5 9 -X X X S P /F P mm N otice These are noi a final specification. Some param etric lim its art? subject to change. DESCRIPTION

SC3746

Contextual Info: Ordering num ber: E N 1973 A 2SA1469/2SC3746 N0.1973A PNP/NPN E pitaxial P lan ar Silicon Transistors 60V/5A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

2SD560

Abstract: Epitaxial Darlington Transistor
Contextual Info: EC / ' 7 - h =7 > i> 7 * 9 S ilico n P o w e r T ra n sisto r 2SD 560 N PN xti ^ + U 3 lJ > b > W i > h i i f f l NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use o r ~u > h h High DC c u r r e n t gain.

OSC-8MHZ

Abstract: MN151634 QFP100-P-1818A
Contextual Info: □ MN151634 M N 151634 1 Type • R O M x 8 -b it 16K ■ R A M (x 4 -b it) 512 1 N u m b e r of Instru ctio ns 104 1 .Ops (at 4 .5 1o 5 .5V) 1 Minimum Instruction Execution Time 2 6 . 6 ms (at 2 . 2 to 5 .5 V , 150kHz) 5 3 . 3 ms (at 2 . 2 to 5 .5 V , 75kHz)

2N3252

Abstract: 4201P 2N3253
Contextual Info: TYPES 2N3252, 2N3253 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 7 4 3 6 . M A R C H 1 9 6 5 - R E V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS m echanical d ata ab solu te m axim u m ratin g s a t 2 5 °C fre e -a ir tem p eratu re unless o therw ise noted

Siliconix J310

Abstract: J308 J310 J310 equivalent
Contextual Info: J310 J309 J308 n-channel JFETs B S ilic o n ix designed f o r . . . Performance Curves N ZA See Section 5 • VHF/UHF Am plifiers ■ Oscillators ■ M ixers • Industry Standard Part In Low Cost Plastic Package • High Power Gain 11 dB Typical at 450 MHz

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range