IR LED 790 NM Search Results
IR LED 790 NM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MM74C911N |
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74C911 - LED Driver, 8-Segment, CMOS, PDIP28 |
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RJMG3018241BAEH |
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RJMG 1x1 10G, with led | |||
RJMG3128711BANR |
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RJMG 1x2 10G, with led | |||
RJMG3226U11E3ER |
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RJMG 2x6 10G, with led | |||
RJMG301T221E3ER |
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RJMG 1x1 10G, with led |
IR LED 790 NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LED770_03AUContextual Info: LED770-03AU Infrared LED Lamp LED770-03AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 770 nm. Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength |
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LED770-03AU LED770-03AU J-6512 LED770 LED770_03AU | |
IR LED 810 nm
Abstract: IR LED 790 nm JET-800-10
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JET-800-10 IR LED 810 nm IR LED 790 nm JET-800-10 | |
SMB1N-780D-02Contextual Info: SMB1N-780D-02 v 1.0 17.03.2014 Description SMB1N-780D-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 780 nm and radiation of 500 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin. |
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SMB1N-780D-02 SMB1N-780D-02 | |
SMB1N-780DContextual Info: SMB1N-780D v 1.1 11.07.2014 Description SMB1N-D630 is a surface mount AlGaInP High Power LED with a typical peak wavelength of 780 nm and radiation of 500 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin. |
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SMB1N-780D SMB1N-D630 SMB1N-780D | |
bbc cs
Abstract: Samsung Electro-Mechanics DC20 GLAR94001 SLSRGBW812TSCSSP
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SLSRGBW812TSCSSP SLSRGBW812TSCSSP) bbc cs Samsung Electro-Mechanics DC20 GLAR94001 SLSRGBW812TSCSSP | |
Contextual Info: HWFR-P5B1 HWFR-P5B2 HWFR-P5C1 HWFR-P5G1 HWFR-P5B3 HWFR-P5C2 HWFR-P5G2 P5 Series InGaN LED Chips Technical Data DS39 Lumileds revolutionary chip design produces extraordinarily bright blue, traffic green, and green chips, and enables LED package designers to |
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IR LED 810 nm
Abstract: 118201
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810nm 1A208 1-800-96MITEL IR LED 810 nm 118201 | |
Contextual Info: CONTROL KNOBS BACKLIT INSTRUMENT PANEL Ambient Light Sensors TCPT1600X01 and TCUT1600X01 Turn and Push Transmissive Sensor MAP LIGHTS NIGHT VISION VSMY98545 SurfLight Infrared Surface Emitter VCNL4020X01 Integrated Proximity and Ambient Light Sensor PLCC2 Plus LED |
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TCPT1600X01 TCUT1600X01 VSMY98545 VCNL4020X01 TCPT1350X01 TCUT1305X01 TEMD5510FX01 TCPT1300X01 TCUT1300X01 TLWY8900 | |
810-04A
Abstract: 760nm 3 lead led bicolor common anode
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L760/810-04A L760/810-04A 760nm 810nm 810-04A 3 lead led bicolor common anode | |
Contextual Info: Hyper Multi TOPLED Hyper-Bright LED LSY T676 Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse • Besonderheit des Bauteils: bei geeigneter Ansteuerung Farbwechsel von grün über gelb und orange bis rot möglich • Wellenlänge: 632 nm super-rot , |
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2000/Rolle, 8000/Rolle, OHA00583 2000/reel, 8000/reel, OHAY1236 | |
Contextual Info: epitex Opto-Device & Custom LED TOP IR LED SMT780-23 Lead Pb Free Product – RoHS Compliant SMT780-23 TOP IR LED with lens SMT780-23consists of an AlGaAs LED mounted on the lead frame as TOP LED package with epoxy resin lens and is 35W/sr typical. It emits a spectral band of radiation at 780nm. |
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SMT780-23 SMT780-23consists 780nm. 780nm 72-hour- | |
Contextual Info: epitex Opto-Device & Custom LED L810-40 _ _ _ f5 STEM TYPE IR LED L810 series High Power Metal Stem LED Lamp The series of L810-40 _ _ _is an GaAlAs LED mounted on a metal stem and covered with epoxy resin or hermetically sealed with f5 glass-lens can. On forward bias it emits a high power radiation, which peaks at 810nm. |
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L810-40 810nm. L810-40K00 L810-40K42 L810-40M00 L810-40M32 L810-40T52 J6512 | |
SSL-LX306F4ADContextual Info: UNCONTROLLED DOCUMENT REV. PART NUM BER S S L—LX306F4AD 03.40 [00.134] E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 2 5 X + PARAM ETER MIN PEAK W AVELENGTH 6.00 [0 .2 3 6 ] i UNITS 2 .0 TEST CÛND nm 2 .5 Vf Vr Ir = 1 0O/uA AXIAL INTENSITY 30 mcd If = 20mA |
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LX306F4AD 610nm SSL-LX306F4AD | |
15.6 ledContextual Info: ILI|XI CEL*J [ a1 Jk II ^ 50mm LED Cluster Lamp LTM-9062-1 Features * * * * * Waterproof seating and rigid package. Wide viewing angle and good reliability. Long operation life and low power consumption. High luminous intensity for outdoor display applications. |
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LTM-9062-1 100mA 15.6 led | |
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Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM LED/PD L780/PD010-40D32A Lead Pb Free Product – RoHS Compliant L780/PD010-40D32A L780/PD010-40D32A consists of a GaAlAs LED 780nm and a Si-PD mounted onTO-18 stem hermetical sealed with a glass ball lens can, and is designed |
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L780/PD010-40D32A L780/PD010-40D32A 780nm onTO-18 J-6512 | |
Contextual Info: epitex Opto-Device & Custom LED L810/PD010-40D52 Φ5 STEM LED/PD metal can sealed PD monitering high power LED L810/PD010-40D52 consists of a GaAlAs LED 810nm and a Si-PD mounted onTO-18 stem hermeticaly sealed with a glass flat can, and is designed to moniter reflected light through detector for |
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L810/PD010-40D52 L810/PD010-40D52 810nm onTO-18 IF50mA J-6512 | |
Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM LED/PD L810/PD006-40D59 Lead Pb Free Product – RoHS Compliant L810/PD006-40D59 metal can sealed as cathode common L810/PD006-40D59 consists of a GaAlAs LED 810nm and a Si-PD mounted onTO-18 stem hermeticaly sealed with a glass flat can, and is designed to |
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L810/PD006-40D59 L810/PD006-40D59 810nm onTO-18 IF50mA J-6512 | |
Contextual Info: epitex LED CHIP C810-40P Opto-Device & Custom LED SPECIFICATION OF LED CHIP C810-40P [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side N (cathode) side : Au Alloy & Pad Bottom Side P (anode) side |
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C810-40P | |
Contextual Info: epitex φ 5 STEM TYPE LED L735/805/850-40B32 ? Opto-Device & Custom LED L735/805/850-40B32 multi-wavelength LED Outer dimension Unit:mm L735/805/850-40B32 consists of an AlGaAs (735, 805, 850nm) LED mounted on TO-18 5pins type stem with an glass lens. Chips are connected as anode common. |
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L735/805/850-40B32 L735/805/850-40B32 850nm) 850nm | |
Contextual Info: epitex Opto-Device & Custom LED STEM TYPE LED L4*765/4*805/4*850/PD2*006-40Q96-I PRELIMINARY L4*760/4*805/4*850/PD2*006-40Q96-I multi-wavelength LED ♦Outer dimension Unit: mm L4*760/4*805/4*850/PD2*006-40Q96-I consists of 12chips of AlGaAs (760nm, 805nm |
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850/PD2 006-40Q96-I 12chips 760nm, 805nm 850nm) | |
Contextual Info: epitex Φ5 MOLD LED LAMP L770-03AU Opto-Device & Custom LED L770-03AU Infrared LED Lamp L770-03AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 770nm. ♦Specifications |
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L770-03AU L770-03AU 770nm. 770nm J-6512. | |
Contextual Info: epitex Opto-Device & Custom LED L770-05AU Φ5 MOLD LED LAMP L770-05AU Infrared LED Lamp L770-05AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 770nm. ♦Specifications |
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L770-05AU L770-05AU 770nm. 770nm J-6512. | |
Contextual Info: epitex Opto-Device & Custom LED Φ3MOLD LED LAMP L770-36AU L770-36AU Infrared LED Lamp L770-36AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 770nm. ♦Specifications |
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L770-36AU L770-36AU 770nm. 770nm J-6512 | |
L810-40M00
Abstract: 810nm
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L810-40M00 L810-40M00 810nm. 810nm J-6512. 810nm |