IR IGBT 1200V 10A Search Results

IR IGBT 1200V 10A Result Highlights (5)

Part	Manufacturer	Description	Download
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IR IGBT 1200V 10A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRGPH40KD2 Abstract: CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST Contextual Info: P D - 9.1250 International I IR e c t i f i e r IRGPH40KD2 Provisional Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • S h o rt circu it - 1 0 \|js @ 125°C , V GE = 10V V c e s = 1200V	OCR Scan	IRGPH40KD2 O-247AC O-247AD) IRGPH40KD2 CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST	PDF
ir igbt 1200V 10A Abstract: APTGS10X120BTP2 APTGS10X120RTP2 Contextual Info: APTGS10X120RTP2 APTGS10X120BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 1200V IC = 10A @ Tc = 80°C Application • AC Motor control Features Non Punch Through NPT Low Loss IGBT - Low voltage drop - Low tail current	Original	APTGS10X120RTP2 APTGS10X120BTP2 APTGS10X120RTP2: ir igbt 1200V 10A APTGS10X120BTP2 APTGS10X120RTP2	PDF
MIG toshiba Abstract: diode 310 Contextual Info: TOSHIBA TENTATIVE MIG15Q904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG 15Q904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. O utput Inverter Stage	OCR Scan	MIG15Q904H 15Q904H 30/iS 25/is /1600V /1200V MIG toshiba diode 310	PDF
power Diode 200V 10A Abstract: ir igbt 1200V 10A "Power Diode" diode Vr 1200v ERW10-120 power diode 10a 10a 1200v diode Contextual Info: ERW10-120 10A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current	Original	ERW10-120 0A/1200V) 20kHz ERW10 power Diode 200V 10A ir igbt 1200V 10A "Power Diode" diode Vr 1200v power diode 10a 10a 1200v diode	PDF
ir igbt 1200V 40A Abstract: 20MT120UF E78996 bridge Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery	Original	20MT120UF E78996) 20KHz 12-Mar-07 ir igbt 1200V 40A 20MT120UF E78996 bridge	PDF
Contextual Info: MIG10Q805H T O SH IB A TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • O utput Inverter Stage : 3y5 10A/ 1200V IGBT	OCR Scan	MIG10Q805H 5A/1600V 961001EAA1	PDF
Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses	Original	I27169 GB15XP120K 12-Mar-07	PDF
gp15n120 Abstract: SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473 Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 gp15n120 SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473	PDF
GB05XP120K Abstract: ntc 0833 igbt 50v 3a w306 Contextual Info: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses	Original	I27168 GB05XP120K 12-Mar-07 GB05XP120K ntc 0833 igbt 50v 3a w306	PDF
Contextual Info: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGD02N120, 40lower SGP02N120 SGI02N120 PG-TO-252-3-1 PG-TO-220-3-1 O-220AB) O-252AA) PG-TO-262-3-1 O-262)	PDF
PG-TO-247-3-1 Contextual Info: SGW02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGW02N120 SGW02N120 PG-TO-247-3-1	PDF
ic60a Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 ic60a	PDF
JESD-022 Abstract: SGW25N120 igbt sgw25n120 Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGW25N120 SGW25N120 641-SGW25N120E8161 SGW25N120E8161 JESD-022 igbt sgw25n120	PDF
G07N120 Abstract: SGP07N120 Q67040-S4272 Contextual Info: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGP07N120 PG-TO-220-3-1 O-220AB) SGP07N120 G07N120 Q67040-S4272	PDF

g25n120 Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGW25N120 SGW25N120 g25n120 PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 M/250w smps inverter circuits	PDF
SGW25N120 Abstract: PG-TO-247-3 ir igbt 1200V 40A Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGW25N120 PG-TO-247-3 SGW25N120 PG-TO-247-3 ir igbt 1200V 40A	PDF
Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27278 GB10RF120K E78996 12-Mar-07	PDF
G15N120 Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 G15N120	PDF
ir igbt 1200V 40A Abstract: G15N120 Contextual Info: SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGB15N120 SGB15N120 ir igbt 1200V 40A G15N120	PDF
G07N120 Abstract: 1200v 20a IGBT Contextual Info: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGB07N120 SGB07N120 G07N120 1200v 20a IGBT	PDF
gp15n120 Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3-1 SGW15N120 gp15n120	PDF
G15N120 Contextual Info: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 G15N120	PDF
PG-TO252-3-11 Abstract: SGD02N120 Contextual Info: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution	Original	SGD02N120, 40lower PG-TO-252-3-1 SGP02N120 SGI02N120 PG-TO-220-3-1 O-252AA) O-220AB) PG-TO-262-3-1 O-262) PG-TO252-3-11 SGD02N120	PDF
igbt sgw25n120 Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour	Original	SGW25N120 PG-TO-247-3 SGW25N120 igbt sgw25n120 50S INFINEON ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit	PDF

IR IGBT 1200V 10A Search Results

IR IGBT 1200V 10A Result Highlights (5)

IR IGBT 1200V 10A Datasheets Context Search

IRGPH40KD2

ir igbt 1200V 10A

MIG toshiba

power Diode 200V 10A

ir igbt 1200V 40A

gp15n120

GB05XP120K

PG-TO-247-3-1

ic60a

JESD-022

G07N120

g25n120

SGW25N120

G15N120

ir igbt 1200V 40A

G07N120

gp15n120

G15N120

PG-TO252-3-11

igbt sgw25n120