IR EMITTER DETECTOR DIP PACKAGE Search Results

SFH910

Abstract: SFH9101 40s21 SFH9102 235L C100 9102 -18 8 pin
Contextual Info: SFH 9101/9102 SIEMENS Light Reflection Switch in SMT Package Preliminary Data Dimensions in inches mm .165 (4.2) .149(3.8) .134 (3 .4). .118(3.0) ' .006 (0.15) .005 (0.13) 0 - .004 (0 -.1) Ï .244 (6.2) .228 (5.8) =^ • • • • Position reporting End position switch

Siemens sfh615 optocoupler

Contextual Info: SIEMENS FEATURES SFH 610/611/615 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches mm .307 (7 .8) _ .291 (7.4) * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward

Contextual Info: NJL5134KL PHOTO REFLECTOR • GENERAL DESCMPTION The NJL5134KL is super thin type Digital Audio Tape End Sensor which consist of high power infrared emitting diode and high sensitve Si photo Transistor. ■ FEATURES • Super thin type Super thin sealed mold package

MOC3040 equivalent

Abstract: MOC3043 equivalent H21A1 PINS MOC3031 equivalent MOC3040 and applications H22B1 equivalent ISP817 IS606 moc3040 ISP521-1
Contextual Info: PHOTO TRANSISTOR General Purpose 4 and 6 Pin Packages; 6 Pin DIP - Safety Approvals: UL, CSA, VDE 0884, BSI, NEMKO, DEMKO, SEMKO, and FIMKO *Note 1 Part Number Features H24A1 Current Transfer Ratio IF = 10mA Min % Isolation Test Voltage (KV) Continuous Forward

SFH902

Abstract: Cr088 SFH901
Contextual Info: SFH901/902 SIEMENS LIGHT REFLECTION SWITCH IN SMT PACKAGE P ackage Dim ensions in inches m m Anode 1 H t - - * F rf 2 EE Emitter 3 t-H- H D 6 C athode ' 11 I 5 Base " i 1 14 C ollector FEATURES • • • • • • • • Light Reflection Switch for 1 mm to 5 mm

SFH905

Abstract: infrared reflection switch circuit SFH905-1 SFH905-2 SFH900-3 SFH900-4
Contextual Info: SIEMENS SFH 900 SERIES SFH 905 SERIES MINIATURE LIGHT REFLECTION EMITTER/SENSOR Package Dimensions in Inches mm Plastic Flash {Between Leads) .177 (4.5) .169 (4.8) 256 (6.5) ,276 (7.0) .012(0.3) .020 (0.5) .039 (1.0) Max .059 (1.5) .071 (1.8) FEATURES 5 24(13.3)

NTE3044

Abstract: optoisolator NPN Darlington transistor
Contextual Info: NTE3044 Optoisolator NPN Darlington Transistor Output Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6–Lead DIP type package. This device is designed for use in

DIN50014

Abstract: ctrsat double channel optocoupler DVE 0884 DVE 0884 012
Contextual Info: ILQ3 QUAD CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Current Transfer Ratio at IF=1.6 mA, 300% Min. • High Collector-Emitter Voltage • BVCEO=50 V • Field-Effect Stable by TRansparent IOn Shield TRIOS • Double Molded Package Offers Isolation Test Voltage

Contextual Info: NTE3044 Optoisolator NPN Darlington Transistor Output Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 8–Lead DIP type package. This device is designed for use in

SFH692AT

Abstract: VCC-100 opto 721 optocoupler Mini-Flat Package
Contextual Info: SFH692AT Photodarlington Optocoupler High BVCEO Voltage Miniflat SOP Package FEATURES • Current Transfer Ratio, min. 1000% • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO=300 V

ILD32

Abstract: ILQ32
Contextual Info: ILD32 DUAL CHANNEL ILQ32 QUAD CHANNEL PHOTODARLINGTON OPTOCOUPLER FEATURES • Very High Current Transfer Ratio, 500% Min. • Isolation Test Voltage, 5300 VACRMS • High Isolation Resistance, 1011 Ω Typical • Low Coupling Capacitance • Standard Plastic DIP Package

SFH905

Abstract: SFH905-2 infrared reflection switch circuit TPI10 2fta
Contextual Info: SFH 900 SERIES SFH 905 SERIES SIEMENS MINIATURE LIGHT REFLECTION EMITTER/SENSOR Package Dimensions in Inches mm Plastic Flash (Betwaen Leads) Sensor Surface .177 (4.5) .189(4.8)' .256(6.5) .276(7.0) .012(0.3) .020 (0.5) .059(1.5) .071 (1.8) FEATURES 524(13.3) —I

DIN50014

Abstract: double Silicon NPN Phototransistor Appnote45
Contextual Info: ILD3 QUAD CHANNEL ILQ3 DUAL CHANNEL Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=1.6 mA, 300% Min. • High Collector-Emitter Voltage • BVCEO=50 V • Field-Effect Stable by TRansparent IOn Shield TRIOS • Double Molded Package Offers Isolation Test

DIN50014

Abstract: QUAD OPTO COUPLERS
Contextual Info: ILD3 QUAD CHANNEL ILQ3 DUAL CHANNEL Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=1.6 mA, 300% Min. • High Collector-Emitter Voltage • BVCEO=50 V • Field-Effect Stable by TRansparent IOn Shield TRIOS • Double Molded Package Offers Isolation Test

NTE3042

Abstract: dsa0023459
Contextual Info: NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6–Lead DIP type package. Features: D 1500V Isolation

NTE3041

Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions

NTE3041

Contextual Info: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions

ILD32

Abstract: ILQ32
Contextual Info: DUAL/QUADCHANNEL ILD32/ILQ32 Photodarlington Optocoupler FEATURES • Very High Current Transfer Ratio, 500% Min. • Isolation Test Voltage, 5300 VACRMS • High Isolation Resistance, 1011 Ω Typical • Low Coupling Capacitance • Standard Plastic DIP Package

ILD32

Abstract: ILQ32
Contextual Info: DUAL/QUADCHANNEL ILD32/ILQ32 Photodarlington Optocoupler Dimensions in inches mm FEATURES • Very High Current Transfer Ratio, 500% Min. • Isolation Test Voltage, 5300 VRMS • High Isolation Resistance, 1011 Ω Typical • Low Coupling Capacitance • Standard Plastic DIP Package

ILD32

Abstract: ILQ32
Contextual Info: DUAL/QUADCHANNEL ILD32/ILQ32 Photodarlington Optocoupler Dimensions in inches mm FEATURES • Very High Current Transfer Ratio, 500% Min. • Isolation Test Voltage, 5300 VRMS • High Isolation Resistance, 1011 Ω Typical • Low Coupling Capacitance • Standard Plastic DIP Package

en 60721-3-3

Abstract: OHM02257 CE-0700 fototransistor DIODE A112 A112-A GEO06840 OHM02258 CE0700 en iec 60721-3-3
Contextual Info: Reflexlichtschranke im SMT-Gehäuse Light Reflection Switch in SMT Package SFH 9202 Vorläufige Daten / Preliminary Data 4.2 3.8 2.1 1.7 0.15 0.13 0.0.1 6.2 5.8 3.4 3.0 0.5 0.3 6 5 4 1 2 3 1 Anode 2 - 3 Emitter 4 Collector 1.27 spacing GEO06840 5 - 6 Cathode

SFH9101

Abstract: fototransistor SFH 910 voltage detector IC Silicon NPN Phototransistor
Contextual Info: Reflexlichtschranke im SMT-Gehäuse Light Reflection Switch in SMT Package SFH 9101 Vorläufige Daten Preliminary Data Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Reflexlichtschranke für 1 mm bis 5 mm

DIODE A112

Abstract: Fototransistor en iec 60721-3-3 en 60721-3-3 iec 60721-3-3 OHO00374 Fototransistor with filter sender A112-A GEO06840
Contextual Info: Reflexlichtschranke im SMT-Gehäuse Light Reflection Switch in SMT Package SFH 9201 Vorläufige Daten / Preliminary Data 2.1 1.7 0.15 0.13 0.5 0.3 6 5 4 1 2 3 1 Anode 4.2 3.8 0.0.1 6.2 5.8 3.4 3.0 2 - 3 Emitter 4 Collector 1.27 spacing GEO06840 5 - 6 Cathode

NTE3045

Contextual Info: NTE3045 Optoisolator Silicon NPN Darlington Phototransistor Output Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown