IR 9428 Search Results

LXT970

Abstract: PM143424 RDPS-PM014 9428
Contextual Info: YCL PM143424 10/100Base Transformer for PCMCIA Feature ♦ Designed to meet IEEE802.3u requirement. ♦Primary inductance 350µH min. with 8mA DC Bias ♦ Designed for use with LXT970. ♦Designed to meet IR 2350C peak requirement. Specifications Parameter

HFB50HI20C

Contextual Info: PD - 94281B HFB50HI20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

Contextual Info: PD - 94281 HFB50HI20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

HFB50HI20C

Abstract: IRFP250 94281C
Contextual Info: PD - 94281C HFB50HI20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

Contextual Info: PD - 94281C HFB50HI20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

30LJQ045

Abstract: SMD-05
Contextual Info: PD-94288B 30LJQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30 Amp, 45V Major Ratings and Characteristics Characteristics Limits Units IF AV Rectangular Waveform 30 A VRRM 45 V IFSM @tp = 8.3ms half-sine 100 A VF @30Apk, TJ =125°C 0.66 V TJ, Tstg Operating and Storage -55 to 150

Contextual Info: PD-94288B SCHOTTKY RECTIFIER 30LJQ045 HIGH EFFICIENCY SERIES 30 Amp, 45V Major Ratings and Characteristics Characteristics Limits Units IF AV Rectangular Waveform 30 A VRRM 45 V IFSM @tp = 8.3ms half-sine 100 A VF @30Apk, TJ =125°C 0.66 V TJ, Tstg Operating and Storage -55 to 150

Contextual Info: PD - 94288 SCHOTTKY RECTIFIER 30LJQ045 HIGH EFFICIENCY SERIES 30 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 30LJQ045 Units IF AV 30 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 100 A VF @ 30Apk, TJ =125°C 0.66 V TJ, Tstg Operating and storage -55 to 150

30LJQ045

Contextual Info: PD - 94288A SCHOTTKY RECTIFIER 30LJQ045 HIGH EFFICIENCY SERIES 30 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 30LJQ045 Units IF AV 30 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 100 A VF @ 30Apk, TJ =125°C 0.66 V TJ, Tstg Operating and storage -55 to 150

16CYQ045C

Abstract: T0-257AA
Contextual Info: PD-94289 16CYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 16CYQ045C Units IF AV 16 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 150 A 0.71 V VF @ 16Apk, TJ =125°C

Contextual Info: PD-94289 16CYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 16CYQ045C Units IF AV 16 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 150 A 0.71 V VF @ 16Apk, TJ =125°C

IRF5NJ3315

Contextual Info: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: NEW 3mm Discrete LED High Efficiency Diffused 4.70 ±.20 [.185 ±.008] .79 ±.20 [.031 ±.008] Dialight 521-94xx TYPE 521-9408 521-9427 521-9428 3.30 [.130] MAX .50 [.020] NOM COLOR Green Red Yellow 2.49 ±.25 [.098 ±.010] 3.09 ±.20 [.122 ±.008] 1.30 ±.25

IRF19

Abstract: F7101 IRF1902 IRF7101 MS-012AA
Contextual Info: PD - 94282 IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

IRF1902

Abstract: F7101 IRF7101 MS-012AA 94282A
Contextual Info: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: m " v " i k u ,:! Dîa light .* i;: 4 used • ■ v: * NOT A VALID PART NUM BER. THIS SHEET IS FOR R EFER E N C E ONLY. A B SO LUTE M A X IM U M RA TING S TA=25“C 3ID*xxxx ' TYPE* LED COLOR 3ID-9408 3ID-9427 3ID-9428 3ID-9498 Green Red Yellow Orange G reen

Contextual Info: 3mm LED High Efficiency Diffused Dialight 3HD-XXXX TYPE* LED COLOR DRAWING 3HD-9211 3HD-9340 3HD-9356 3HD-9408 3HD-9427 3HD-9428 Yellow Red Green Green Red Yellow A A A B B B D raw ing A devices for 564 and ail DIN 41494 com patible 551 and 553 products. D raw ing B devices for 553 and 551 excluding DIN

MOSFET IRF 713

Abstract: IRHMS597160 365A pin JANSR2N7550T1 IRHMS593160 JANSF2N7550T1 300Krads
Contextual Info: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

Contextual Info: PD-94283C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

Contextual Info: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

IRHM597160

Abstract: JANSR2N7550T1 IRHMS593160 IRHMS597160 JANSF2N7550T1
Contextual Info: PD-94283D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHM597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

IRHMS593160

Abstract: IRHMS597160
Contextual Info: PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A*