IR 523 A Search Results

RB520S-30

Contextual Info: RB520S-30 SCHOTTKY BARRIER DIODES PRODUCT SUMMARY SOD-523 Plastic-Encapsulate Diodes SOD-523 + FEATURES Small surface mounting type Low IR. IR = 0.1 uA High reliability - Pb-free; RoHS-compliant MARKING: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low IR. IR = 0.1 uA z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Jiangsu Changjiang Electronics Technology

Abstract: rb520s30 RB520S-30 Ir 523 A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low IR. IR = 0.1 uA z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

CH520S-30GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH520S-30GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * Low power rectification and high speed switching SC-79/SOD-523 FEATURE * Extremely small surface mounting type. SC-79/SOD-523 * Low IR. (IR=0.1uA Typ.)

SC-79

Abstract: CH751S-40
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH751S-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * High speed switching for detection SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * Low VF and low IR * High reliability

S3 marking DIODE

Abstract: 1ss388 Marking s3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 FEATURES Small pacakage Low forward voltage : VF3 = 0.54 typ Low reverse current : IR = 5uA ( typ ) MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

1ss388

Abstract: S3 marking DIODE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 + FEATURES z Small pacakage z Low forward voltage : VF3 = 0.54 typ z Low reverse current : IR = 5uA ( typ ) - MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

CES520

Abstract: SOD523 land pattern
Contextual Info: CES520 Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit

Contextual Info: CES520 Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit

Marking s3

Abstract: smd transistor s3 1SS388
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02

Contextual Info: Product specification RB520S-30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Ultra Small mold type. EMD2 + +0.1 0.6-0.1 - Low IR. High reliability. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25 Param eter

1SS369

Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS369 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.54V(TYP.) :IR = 5 +0.1 1.6-0.1 A(MAX.) 0.77max +0.05 0.1-0.02 0.07max

Contextual Info: VESD05A1B-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 µA (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

Contextual Info: Product specification 1SS369 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.54V(TYP.) :IR = 5 +0.1 1.6-0.1 A(MAX.) 0.77max +0.05 0.1-0.02 0.07max Low reverse current Absolute Maximum Ratings Ta = 25

Contextual Info: Product specification 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maximum Ratings Ta = 25

19945

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 µA (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

Contextual Info: VESD05A1B-02V www.vishay.com Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 µA (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

Contextual Info: VESD05A1B-02V www.vishay.com Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 A (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

Contextual Info: VESD05A1-02V Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge 2 1 • Typ. capacitance = 130 pF 20278 19344 • Leakage current IR < 1 µA VR = 5 V

IRF520

Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF121 IRF122 IRF123
Contextual Info: — = = ^ - = fl4 D Ë f â 4b*11,74 Q0E?aS 4 □ 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 85 4 D IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power M O SFET s, 11 A, 60-100 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description

Contextual Info: CES520 ショットキバリアダイオード シリコンエピタキシャル形 CES520 1. 用途 • 高速スイッチング用 2. 特長 1 逆電流が小さい。: IR(2) = 5 µA (最大) (2) 小型ESCパッケージ。SOD-523とSC-79相当。 3. 外観と内部回路構成図

SBAS16XV2T1G

Abstract: BAS16XV2T1 SOD-52 SOD523 marking A6
Contextual Info: BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G Switching Diode Features • • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package AEC−Q101 Qualified and PPAP Capable

marking AMG

Abstract: NSV1SS400T1G 1SS400T1G
Contextual Info: 1SS400T1G, NSV1SS400T1G High-Speed Switching Diode Features • • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package AEC−Q101 Qualified and PPAP Capable

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com