IR 331 G Search Results

transistor h 331

Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Contextual Info: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten

transistor d 331

Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

phototransistor 650 nm

Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

Contextual Info: DIM. "A" DIM. "B" .331 8o40 .76 (19.2) CIRCUIT SIZE 6 .55 ( 14.1 .0 9 8 (2.5 0) "A" REF. i _K 3. .38 ,59 (9 .6 ) •165 (15.0) ' (4.2 0) (5.6) ir . 106 (2 .7 0 ) CKT. .3 i (7.9) (5.4) .287 (7 .3 0 ) Sfl-IP1 d a ( l. 8 0 ± 0 . 0 5 ) . I6 5±.064 _

Contextual Info: 13 C IR C U IT S IZ E 6 8 I0 10 D IM . •A" D IM . 'B ' .331 8 .4 0 .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .7 6 (19.2) I4 I6 I8 20 22 24 .5 5 IM£LQUL3£!iS 1.25 (31.8) 1.42 ( 3 6 .0 ) l ■I65 (4 .2 0 ) ■31 (7 .9 ) ■287 _ (7 .3 0 ) .22 (5 .6 ) R EF'

Contextual Info: 13 C IR C U IT S IZ E 2 4 6 8 I0 I2 I4 I6 I8 20 22 24 10 D IM . •A" — .165 4 .2 0 .331 (8 .4 0 ) .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .8 2 7 (2 1 .0 0 ) .9 9 2 (2 5 .2 0 ) 1.157 (2 9 .4 0 ) 1.323 (3 3 .6 0 ) 1.488 (3 7 .8 0 ) 1.654 (4 2 .0 0 ) 1.819

Contextual Info: 13 10 D IM . •A" D IM . 'B ' .331 8 .4 0 .4 9 6 (1 2 .6 0 ) .6 6 1 (1 6 .8 0 ) .7 6 (19.2) C IR C U IT S IZ E 6 8 I0 I2 I4 I6 I8 20 22 24 .8 2 7 (2 1 .0 0 ) .9 9 2 (2 5 .2 0 ) 1.157 (2 9 .4 0 ) 1.323 (3 3 .6 0 ) 1.488 (3 7 .8 0 ) 1.654 (4 2 .0 0 ) 1.819

Contextual Info: 13 10 D IM . "A" D IM . "B" D IM . "C" D IM . "D" .6 0 6 1 5 .4 0 .7 7 2 (1 9 .6 0 ) .9 3 7 (2 3 .8 0 ) .3 5 4 (9 .0 0 ) .5 2 0 (1 3 .2 0 ) .6 8 5 (1 7 .4 0 ) .213 (5 .4 0 ) .3 7 8 (9 .6 0 ) .5 4 3 (1 3 .8 0 ) .165 (4 .2 0 ) .331 (8 .4 0 ) C IR C U IT S IZ E

Contextual Info: 13 10 D IM . "A" C IR C U IT S IZ E "A" REF. l.8 0 ± .0 5 D IA.- .165 (4 .2 0 ) .331 (8 .4 0 ) .3 7 8 (9 .6 0 ) .5 4 3 (1 3 .8 0 ) .7 0 9 .4 9 6 (1 2 .6 0 ) (1 8 .0 0 ) .6 6 1 .8 7 4 (1 6 .8 0 ) (2 2 .2 0 ) .8 2 7 1.039 (2 1 .0 0 ) (2 6 .4 0 ) .9 9 2 1.205

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: SPECIFICATION FOR APPROVAL REF. : SF0602□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Line Filter NAME REV. 20130927-F 1 PAGE B 331 Ⅰ﹒Configuration and dimensions： Marking C A D G 1.0 2.5 3 E W 2 1.5 6.6 1 PCB Pattern 4 F Unit：m/m A 6.50 max.

IRF730

Abstract: 733 331 IRFP330 731 MOSFET IRF731 IRFP331 331Z Z012I IRF732 dd173d
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • V T b M l M S D G I T S T T 523 ■ SUCK N-CHANNEL POWER MOSFETS IRF730/731Z732/733 IRFP330/331/332/333 FEATURES • • • • • • • TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

AUK 821

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are

CR1218

Abstract: CR0603 CR0805 CR1206 CR1210 CR2010 CR2030 CR2512
Contextual Info: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application

HM 392 - 560

Abstract: TE MARKING CODE 6-PIN ic HM 392 - 560
Contextual Info: For technical assistance call the Networks Products number on the back cover. Top m arking standard Features • High profile offers increased pow er handling ■ C om patible w ith autom atic insertion equipm en t ■ S up erio r package integrity ■ M arkin g on contrasting background fo r

IR 331 G

Abstract: R331603
Contextual Info: T H T .2 0 series C ab le S T Y L E C O D E N o. > -O V max. 0a group 1 s i/i < n i/i 3 J 0> — c c tf “•I a. X ai a 5 REC EPTAC LES a 19 4 h o i n s 0 3.2 JL . 1-fCTTn R 331 405 m S q u a r e fl a n g e • P.T .F .E . in su la to r a31 - a 34 73 J7

Contextual Info: ATC GENERAL PURPOSE CAPACITORS: NPO COG DIELECTRIC ELECTRICAL CHARACTERISTICS CAPACITANCE RANGE: 0.5 pF to 0.10 µF. TEMPERATURE CHARACTERISTIC: 0 ± 30ppm/°C. W L OPERATING TEMPERATURE RANGE: -55°C to +125°C. T (MAX.) DISSIPATION FACTOR: 0.1% (max.) @ + 25°C and + 125°C @ 1.0 Vrms

cal-chip GMC21 Series

Contextual Info: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of

IRF420

Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B S ilic o n ix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350

Contextual Info: FACTSHEET F-199 amtec TMM S^-T 2mm HEADER TMM SERIES S P E C IF IC A T IO N S Materials: Insulator Material: Black Liquid Crystal Polymer Term inal Material: Phosphor Bronze Operating Tem p Range: -65°C to +105°C with Tin; -65°C to +125°C with Gold Plating:

473 capacitor

Contextual Info: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of

Contextual Info: Cal-Chip Electronics, Incorporated Multilayer Ceramic Chip Capacitors GMC SERIES Introduction Multilayer Surface Mount Ceramic Capacitors are constructed by screen printing alternative layers of internal metallic electrodes onto ceramic dielectric materials and firing into a concrete monolithic body, then completed by application of