IR 30 D1 Search Results

F30JC10

Abstract: F20JC f20jc10 F15JC10 F30JC F30SC3L
Contextual Info: Schottky Barrier Diodes High frequency rectifying Twin Diodes Electrical C haracteristics A b solute M axim um Ratings Type No. DF30SC3ML V rm lo Conditions Tc [V ] [A ] 30 4M 40 DF30PC3M 30 SF30S C 3L 30 40 4 30 30 30 Vf Ir I fsm Tstg Tj m ax Conditions

Contextual Info: Comchip Small Signal Schottky Diodes SMD Diode Specialist CDBT0230-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen Free SOT-23 Features 0.119 3.04 0.110(2.80) -Small suface mounting type. 3 -Low IR.(IR=10uA Typ.) 0.056(1.40) 0.047(1.20)

MTL ICC 311

Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
Contextual Info: - 84- 1 & tíü ! 2È J l 5IJ •it ¥ É’J & ti « >CTí=7? H D SP-5621 H D SP-5623 L N 526RG A - HP & T ft 14 Jft [Ta= 2 o O «ist;!: If Vjf i V i im A : 3 30 0.56 G aP S i! m m - fcJ£ W.i$ R liŒ A/. A X Ir Vjr Iy If Ir Ir nm '' !nm ' ;m A ; ¡m cd ' ! rn A 1 i. V j (m A : '.„A '

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

KDR735U

Contextual Info: SEMICONDUCTOR KDR735U TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. FEATURES E M ・Low Reverse Current : IR=0.1 A Typ. C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V

KDR735U

Contextual Info: SEMICONDUCTOR KDR735U TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. FEATURES E M ・Low Reverse Current : IR=0.1 A Typ. CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Reverse Voltage VR 30 V

RC6564AV

Abstract: R101
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC6564A IF-to-Digital C onverter Features Integrated IF-to-Digital™ conversion IF bandwidth from 30 to 80MHz 40MHz 8 bit ADC Operating range between 8.5V to 13.2V Demodulation of 64QAM constellations

Contextual Info: P A IR C H II-D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC4277 Dual Precision Operational Amplifier Features • • • • • • • • • High DC precision Very low VOS - 30 raV Very low VOS drift - 0.3 mVfC High open-loop gain - 5000 V/raV

HT6220A

Abstract: HT6222A transistor k49 transistor k58 HT6221A MS-013 transistor k41 k27 transistor transistor k61 transistor k46
Contextual Info: HT6220A/HT6221A/HT6222A Multi-Purpose Encoders Features • Operating voltage: 2.0V~3.6V · Maximum active keys · DOUT with 38kHz carrier for IR medium - HT6220A: 30 keys - HT6221A: 32 keys - HT6222A: 64 keys · Low standby current · Minimum transmission word: one word

M32 250C fuse

Abstract: electronic transformer halogen 12v 50W 220V LED Bulb circuit diagram t8 36w electronic ballast vossloh specification for 11W G23 Pin CFL bulb xenon arc lamp ignitor metal halide electronic ballast circuit 150 ELECTRONIC BALLAST DIAGRAM 400W 1W HIGH BRIGHT LED 230V CIRCUITS ELECTRONIC BALLAST DIAGRAM 28w
Contextual Info: Contents GE Lighting Incandescent Reflector Heat Lamps 3 Halogen Precise MR11, Precise™ ConstantColor™ MR16, Precise™ Bright MR16, Precise™ Alutech™ MR16, TAL 50, UV-Control CeriTite™, DEQ, Halogen IR™ DEQ, Haloglobe & BTT, Halo T, PAR 30

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r tm w w w .fa ir c h ild s e m i.c o m RC6564A I F -t o -D ig ita l C o nve rte r Features Integrated IF-to-Digital™ conversion IF bandwidth from 30 to 80MHz 40MHz 8 bit ADC Operating range between 8.5V to 13.2V

marking B12 diode SCHOTTKY

Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

smd diode marking code g

Abstract: A11 smd diode marking w1 TSC Date Code marking SMD diode MARKING CODE 10s smd diode marking Av
Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: Product Summary Per Leg VRRM (V) IO (A) 100 30 VF(MAX) (V) @ +25°C 0.78 SBRT60U100CT Green 60A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Features and Benefits • IR(MAX) (mA) @ +25°C 0.3 Reduced ultra-low forward voltage drop (VF); better efficiency

Contextual Info: MBR1030CT- MBR1060CT Green 10A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits MBR1030CT – MBR1045CT Per Leg VRRM (V) IO (A) 30 - 45 5 VF (MAX) (V) @ +25°C 0.65 IR (MAX) (mA) @ +25°C 0.1 MBR1050CT – MBR1060CT (Per Leg) VRRM (V)

JEDEC-JESD47

Abstract: vs-30pt100
Contextual Info: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

Contextual Info: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

c1175 transistor

Abstract: HF Colpitts VCO 790 MHz Saw Filter
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC6508 Q A M IF D o w n c o n v e r t e r Features Integrated IF Down Converter IF bandwidth from 30 MHz to 80 MHz Operating range between 8.5V to 13.2V 63dB peak conversion gain from IF to baseband

2.1 to 5.1 home theatre circuit diagram with remote control

Contextual Info: STFPC320 Front panel controller/driver with standby power management and real-time clock Features • IC front panel VFD controller driver ■ Standby power management to the host ■ 3.3 V VDD and down to -30 V (VSS) supply for the IC ■ IR remote control decoder

SEG CT 7800

Abstract: sony remote control 5.1 home theatre remote circuit diagram R2000 remote control protocol 2.1 to 5.1 home theatre circuit diagram with remote control philips RC5 patent CT-2078 philips 5.1 home theater ir remote controller ic
Contextual Info: STFPC320 Front panel controller/driver with standby power management and real-time clock Features • IC front panel VFD controller driver ■ Standby power management to the host ■ 3.3 V VDD and down to -30 V (VSS) supply for the IC ■ IR remote control decoder

Contextual Info: MBR1030CT- MBR1060CT-I Green 10A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits MBR1030CT – MBR1045CT Per Leg VRRM (V) IO (A) 30 - 45 5 VF (MAX) (V) @ +25°C 0.65 IR (MAX) (mA) @ +25°C 0.1 MBR1050CT – MBR1060CT-I(Per Leg) VRRM (V)

Contextual Info: SBR30A45CTBQ 30A SBR SUPER BARRIER RECTIFIER Green Product Summary VRRM V 45 IO (A) 30 Features and Benefits VF MAX (V) @+25°C IR MAX (mA) @+25°C 0.55 0.5 •  the stringent requirements of Automotive Applications. It is ideally suited to use as :

DO213-AB color band

Abstract: do-213ab solder PAD DIMENSIONS color bands do-213ab 1N6478 1N6484 RED Color band DIODES GLASS 1N6480
Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 10 µA VF 1.1 V Tj max. 175 °C d* e t n Pate *Glass-plastic encapsulation

Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 10 µA VF 1.1 V Tj max. 175 °C d* e t n Pate *Glass-plastic encapsulation